CS684TO3 COMSET [Comset Semiconductor], CS684TO3 Datasheet - Page 2

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CS684TO3

Manufacturer Part Number
CS684TO3
Description
PNP SILICON DARLINGTON POWER TRANSISTORS
Manufacturer
COMSET [Comset Semiconductor]
Datasheet
CS684 TO3
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
1. Measured under pulse conditions :
2.
MECHANICAL DATA CASE TO-3
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
-I
-I
-I
-V
h
-V
h
f
V
-I
t
t
hfe
on
off
Symbol
CBO
CEO
EBO
FE
fe
(SB)
F
CE(SAT)
BE
DIMENSIONS
V
BE
mm
decreases by about 3,6 mV/K with increasing temperature.
25,51
38,93
30,12
17,25
10,89
11,62
19,47
8,54
1,55
4,06
1
Collector cut-off current
Collector cut-off current
Emitter cut-offcurrent
Collector-Emitter saturation
Voltage
DC Current Gain
Base-Emitter Voltage(1&2)
Small signal current gain
Ut-off frequency
Diode forward voltage
Second-breakdown
collector current
Turn-on time
Turn-off time
inches
Collector
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,77
0,04
0,16
Emitter
0,6
Base
Ratings
COMSET SEMICONDUCTORS
t
P
<300µs, δ <2%.
I
I
I
I
-I
-V
-V
-V
-V
-V
-V
I
-V
heatsink
-I
E
E
B
C
F
C
con
=1,5 A
=0 , -V
=0 , -V
=0 , -V
=0, -V
CE
CE
CE
CE
CE
CE
CE
=1.5 A, -I
= 1,5A, I
=3 V, -I
=3 V, -I
=3 V, -I
=3 V, -I
=3 V, -I
=3 V, -I
=50 V, t
EB
CB
CB
CE
=5 V
Test Condition(s)
= -V
= -1/2V
= -1/2V
B
C
C
C
C
C
C
P
bon
=6 mA
=500 mA
=1,5 A
=4 A
=1,5 A
=1,5 A, f= 1 MHz
=1,5 A
= 20ms,non rep., without
CEOMAX
= -I
CBOMAX
CEOMAX
boff
= 6mA, V
=140 V
= 70V,T
=70 V
CC
=30V
j
= 150°C
Min Typ
750
0,8
10
-
-
-
-
-
-
-
-
-
-
-
-
2000
750
1,5
0,8
4,5
60
-
-
-
-
-
-
-
-
-
Mx Unit
0,2
0,2
2,5
1
5
2
2
8
-
-
-
-
-
-
-
2
kHz
mA
mA
mA
µs
V
V
V
A

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