SD103BWS-V VISHAY [Vishay Siliconix], SD103BWS-V Datasheet - Page 2

• Manufacturer Part Number: SD103BWS-V
• Description: Small Signal Schottky Diodes
• Manufacturer: VISHAY [Vishay Siliconix]

SD103AWS-V/103BWS-V/103CWS-V
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
Figure 1. Typical Variation of Forward Current vs. Forward Voltage
www.vishay.com
2
Leakage current
Forward voltage drop
Diode capacitance
Reverse recovery time
amb
amb
Figure 2. Typical High Current Forward Conduction Curve
= 25 °C, unless otherwise specified
= 25 °C unless otherwise specified
18488
18489
1000
Parameter
0.01
100
0.1
10
5
4
3
2
1
0
1
0
0
duty cycle = 2 %
t
p
0.2
= 300 ms
V
V
F
F
- Forward Voltage (V)
- Forward Voltage (V)
0.5
0.4
V
V
V
I
I
V
I
recover to 0.1 I
F
F
F
R
R
R
R
= 20 mA
= 200 mA
= I
0.6
= 30 V
= 20 V
= 10 V
= 0 V, f = 1 MHz
R
1.0
= 50 mA to 200 mA,
Test condition
0.8
R
1.0
1.5
SD103BWS-V
SD103CWS-V
SD103AWS-V
Part
Figure 3. Typical Variation of Reverse Current at Various
18491
Figure 4. Diode Capacitance vs. Reverse Voltage
1000
0.01
100
100
20084
0.1
10
10
1
1
Symbol
0
0
C
V
V
I
I
I
t
R
R
R
rr
D
5
F
F
10
10 15 20 25 30 35 40 45 50
V
R
V - Reverse Voltage (V)
R
Temperatures
- Reverse Voltag e (V)
Min
20
T
amb
= 125 °C
100 °C
30
Typ.
75 °C
50 °C
25 °C
50
10
Document Number 85682
40
Rev. 1.7, 18-Sep-06
Max
370
600
5
5
5
50
Unit
mV
mV
µA
µA
µA
pF
ns