BYV52PI STMICROELECTRONICS [STMicroelectronics], BYV52PI Datasheet - Page 4

• Manufacturer Part Number: BYV52PI
• Description: HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

BYV52/PI
Fig.7
temperature.
(duty cycle : 0.5) (SOD93)
35
30
25
20
15
10
Fig.9 : Junction capacitance versus reverse
voltage applied (Typical values).
20 0
1 90
1 80
1 70
1 60
1 50
1 40
1 30
1 20
11 0
1 00
Fig.11 : Peak reverse current versus dIF/dt.
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4/6
5
0
0
I
1
F(av)(A)
1
C(pF)
IRM(A)
90%CONFIDENCE
=0.5
IF=IF(av)
=tp/T
20
:
20
Average
T
40
tp
Tamb( C)
60
1 0
current
Rth(j-a)=15
VR(V)
o
80
10
dIF/dt(A/us)
F=1Mhz Tj=25 C
Rth(j-a)=Rth(j-c)
100 120 140
versus
o
Tj=100 C
C/W
Tj=25 C
O
O
1 00
o
ambient
2 00
100
160
Fig.8
temperature.
(duty cycle : 0.5) (TOP3I)
35
30
25
20
15
10
Fig.10 : Recovery charges versus dI
1 00
Fig.12 : Dynamic parameters versus junction
temperature.
1.50
1.25
1.00
0.75
0.50
0.25
0.00
5
0
90
80
70
60
50
40
30
20
10
0
0
I
F(av)(A)
1
0
QRR;IRM[Tj]/QRR;IRM[Tj=125 C]
QRR(nC)
=0.5
90%CONFIDENCE
IF=IF(av)
=tp/T
20
:
25
Average current
T
40
tp
50
Tamb( C)
60
Tj( C)
IRM
o
Rth(j-a)=15
o
80
10
75
dIF/dt(A/us)
QRR
Rth(j-a)=Rth(j-c)
100 120 140
Tj=100 C
100
o
o
versus
C/W
Tj=25 C
F
/dt.
O
125
O
ambient
100
160
150