CM400C1Y-24S MITSUBISHI [Mitsubishi Electric Semiconductor], CM400C1Y-24S Datasheet - Page 7

• Manufacturer Part Number: CM400C1Y-24S
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

< IGBT MODULES >
CM400C1Y-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : September 2011
PERFORMANCE CURVES
100
0.1
10
1
1000
10
100
10
10
SWITCHING CHARACTERISTICS
E
E
E
COLLECTOR CURRENT I
INDUCTIVE LOAD, PER PULSE
Tj=125 °C
Tj=150 °C
V
o f f
o n
r r
SWITCHING CHARACTERISTICS
EMITTER CURRENT I
COLLECTOR CURRENT I
CC
V
=600 V, V
CC
=600 V, V
HALF-BRIDGE
INDUCTIVE LOAD
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
GE
100
=±15 V, R
GE
=±15 V, R
100
G
E
=0 Ω,
(A)
G
C
=0 Ω,
(A)
C
(A)
Tj=125 °C
Tj=150 °C
t
t
t
f
t
r
d ( o n )
d ( o f f )
1000
1000
100
10
1
1000
7
1000
100
1000
10
100
10
0.1
0.1
EXTERNAL GATE RESISTANCE R
EXTERNAL GATE RESISTANCE R
Tj=125 °C
Tj=150 °C
Tj=125 °C
Tj=150 °C
SWITCHING CHARACTERISTICS
SWITCHING CHARACTERISTICS
V
V
INDUCTIVE LOAD, PER PULSE
CC
CC
=600 V, I
=600 V, I
INDUCTIVE LOAD
1
HALF-BRIDGE
1
HALF-BRIDGE
(TYPICAL)
(TYPICAL)
C
C
/I
=400 A, V
E
=400 A, V
GE
10
GE
=±15 V,
10
t
t
t
t
=±15 V,
d ( o n )
d ( o f f )
f
r
E
E
E
o n
r r
o f f
G
G
(Ω)
(Ω)
100
100
10000
1000
100
100
10
1