CM400DU-12H_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM400DU-12H_09 Datasheet - Page 3

• Manufacturer Part Number: CM400DU-12H_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
800
600
400
200
10
10
10
0
COLLECTOR-EMITTER VOLTAGE V
5
4
3
2
1
0
EMITTER-COLLECTOR VOLTAGE V
3
7
5
3
2
2
7
5
3
2
1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
0
0
COLLECTOR-EMITTER SATURATION
T
T
V
V
j
j
=25°C
GE
GE
FORWARD CHARACTERISTICS
= 25°C
VOLTAGE CHARACTERISTICS
(V)
COLLECTOR CURRENT I
OUTPUT CHARACTERISTICS
15
=20
= 15V
T
T
2
j
j
200
FREE-WHEEL DIODE
= 25°C
= 125°C
( TYPICAL )
( TYPICAL )
( TYPICAL )
4
400
14
6
600
C
8
13
12
11
10
( A )
9
8
CE
EC
800
10
( V )
( V )
3
10
800
600
400
200
10
10
10
10
–1
0
8
6
4
2
0
COLLECTOR-EMITTER VOLTAGE V
7
5
3
2
7
5
3
2
7
5
3
2
10
2
1
0
0
0
COLLECTOR-EMITTER SATURATION
CAPACITANCE CHARACTERISTICS
–1
V
V
GATE-EMITTER VOLTAGE V
T
GATE-EMITTER VOLTAGE V
CE
TRANSFER CHARACTERISTICS
GE
j
VOLTAGE CHARACTERISTICS
2
= 25°C
= 10V
= 0V
3 5 7
4
4
10
( TYPICAL )
( TYPICAL )
( TYPICAL )
0
HIGH POWER SWITCHING USE
8
8
2
MITSUBISHI IGBT MODULES
3 5 7
12
12
10
CM400DU-12H
1
T
T
j
j
I
I
I
C
C
C
2
= 25°C
= 125°C
16
16
= 800A
= 400A
= 160A
GE
GE
3 5 7
INSULATED TYPE
C
C
C
( V )
( V )
oes
res
ies
CE
10
20
20
( V )
2
Feb. 2009