CM900DU-24NF_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM900DU-24NF_09 Datasheet - Page 4

• Manufacturer Part Number: CM900DU-24NF_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

10
10
10
10
10
10
10
10
10
10
10
10
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
1
0
3
2
1
0
10
10
1
–3
Single Pulse
IGBT part:
Per unit base = R
FWDi part:
Per unit base = R
1
Conditions:
V
V
R
T
Inductive load
T
point is just
under the chips
Conditions:
V
V
T
R
Inductive load
SWITCHING CHARACTERISTICS
IMPEDANCE CHARACTERISTICS
C
j
j
CC
GE
2 3 5 7
CC
GE
G
G
= 125°C
= 125°C
measured
COLLECTOR CURRENT I
= 0.35Ω
= 0.35Ω
2
2
= 600V
= ±15V
= 600V
= ±15V
(IGBT part & FWDi part)
TRANSIENT THERMAL
10
3
3
–2
HALF-BRIDGE
2 3 5 7
t
t
5 7
5 7
(TYPICAL)
d(off)
d(on)
(TYPICAL)
TIME (s)
th(j–c’)
th(j–c’)
I
t
t
r
C
I
f
C
10
10
-E
10
10
(A)
E
2
–1
–5
SW
2
= 0.021K/ W
= 0.034K/ W
rr
2 3 5 7
2 3 5 7
2
2
10
10
3
3
0
–4
C
2 3 5 7
2 3 5 7
(A)
E
5 7
5 7
E
on
off
10
10
10
10
10
10
10
3
3
2
7
5
3
2
7
5
3
2
1
–3
3
–1
–2
–3
4
10
10
10
10
10
10
20
16
12
REVERSE RECOVERY CHARACTERISTICS
8
4
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
3
2
1
0
0
1
I
Conditions:
V
V
T
I
Inductive load
C
C
j
CC
GE
= 900A
1000 2000 3000 4000 5000 6000 7000
= 125°C
= 900A
2
EMITTER CURRENT I
= 600V
= ±15V
0.5
OF FREE-WHEEL DIODE
GATE CHARGE Q
3
CHARACTERISTICS
HIGH POWER SWITCHING USE
GATE CHARGE
MITSUBISHI IGBT MODULES
5 7
(TYPICAL)
(TYPICAL)
(TYPICAL)
1
V
R
I
t
R
rr
CC
rr
G
10
G
CM900DU-24NF
-E
(Ω)
= 400V
2
SW
1.5
Conditions:
V
V
R
T
Inductive load
2
j
V
G
CC
GE
G
= 25°C
CC
(nC)
= 0.35Ω
3
E
= 600V
= ±15V
(A)
= 600V
2
5 7
E
E
E
on
off
rr
10
2.5
3
Feb. 2009