STE36N50A STMICROELECTRONICS [STMicroelectronics], STE36N50A Datasheet - Page 2

• Manufacturer Part Number: STE36N50A
• Description: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

STE36N50A
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/8
V
Symbol
Symbol
Symbol
Symbol
R
R
V
g
R
( BR)DSS
I
thj-cas e
C
I
I
C
E
E
G S(th)
DS( on)
D( on)
fs
C
I
I
DS S
G SS
thc-h
A R
A R
oss
AR
AS
iss
rss
( )
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Repetitive Avalanche Energy
(pulse width limited by T
Avalanche Current, Repetitive or Not-Repetitive
(T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
c
= 100
Parameter
Parameter
Parameter
o
j
D S
C, pulse width limited by T
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
j
I
V
V
V
V
V
V
V
V
AR
max,
max,
Parameter
D
DS
DS
GS
DS
GS
GS
DS
GS
DS
DS
= 1 mA
, V
= V
= 10V
= 10 V
= 25 V
= Max Rating
= Max Rating x 0.8 T
=
= 10V
> I
> I
case
D D
D( on)
D( on)
GS
< 1%)
< 1%)
= 50 V)
20 V
= 25
Test Conditions
Test Conditions
Test Conditions
x R
x R
V
I
I
I
j
D
D
D
f = 1 MHz
max,
GS
= 1 mA
o
= 18 A
= 18 A
D S(on) max
D S(on) max
C unless otherwise specified)
= 0
< 1%)
T
c
V
= 100
c
I
G S
D
= 125
= 18 A
= 0
Max
o
Max
C
o
C
Min.
Min.
Min.
500
36
16
2
Max Value
Typ.
Typ.
Typ.
0.12
0.05
100
0.3
14
40
9
3
Max.
Max.
Max.
1500
8000
1300
0.14
0.28
300
350
300
4
o
o
Unit
Unit
Unit
Unit
C/W
C/W
nA
mJ
mJ
pF
pF
pF
V
V
A
S
A
A
A
A