L6210_08 STMICROELECTRONICS [STMicroelectronics], L6210_08 Datasheet - Page 4

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L6210_08

Manufacturer Part Number
L6210_08
Description
Dual Schottky diode bridge
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Electrical specifications
2
2.1
2.2
2.3
Note:
4/8
Electrical specifications
Absolute maximum ratings
Table 2.
Thermal data
Table 3.
Electrical characteristics
Table 4.
At forward currents of greater than 1 A, a parasitic current of approximately 10 mA may be
collected by adiacent diodes.
R
R
Symbol
Symbol
Symbol
TH J-CASE
TH J-AMB
T
T
V
AMB
V
STG
I
I
F
L
R
F
Absolute maximum ratings
Thermal data
Electrical characteristics
(T
J
Repetitive Forward Current Peak
Peak Reverse Voltage (per diode)
Operating Ambient Temperature
Storage Temperature Range
Thermal Impedance Junction-case
Thermal Impedance Junction-ambient without
External Heatsink
Forward Voltage Drop
Leakage Current
= 25°C unless otherwise specified)
Parameter
Parameter
Parameter
V
R
= 40 V, T
Test conditions
I
I
F
F
I
= 100 mA
= 500 mA
F
= 1 A
AMB
= 25 °C
Min.
Min.
–55 to +150
Value
50
70
2
Typ.
Typ.
0.65
0.8
1
Max.
Max.
0.8
1.2
14
65
1
1
Unit
L6210
°C
°C
°C/W
°C/W
A
V
Unit
Unit
mA
V
V
V

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