TC2876 TRANSCOM [Transcom, Inc.], TC2876 Datasheet

TC2876

Manufacturer Part Number

TC2876

Description

5 W Low-Cost Packaged PHEMT GaAs Power FETs

Manufacturer

TRANSCOM [Transcom, Inc.]

Datasheet

1.TC2876.pdf (2 pages)

Available stocks

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Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TC2876

Manufacturer:

M/A-COM

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TC2876A

Manufacturer:

MINI

Quantity:

1 400

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FEATURES

DESCRIPTION

ELECTRICAL SPECIFICATIONS (T

Note: * P

TRANSCOM, INC., 90 Dasoong 7

Web-Site: www.transcominc.com.tw

Symbol

PAE

IP3

The TC2876 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs

Power chip. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All

devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power

amplifiers for commercial and military high performance power applications.

DSS

1dB

Nominal PAE of 40 % at 6 GHz

DGO

5 W Typical Output Power at 6 GHz

7 dB Typical Linear Power Gain at 6 GHz

High Linearity: IP3 = 47 dBm Typical at 6 GHz

High Power Added Efficiency:

Suitable for High Reliability Application

Breakdown Voltage: BV

Lg = 0.6 m, Wg = 12 mm

Tight Vp ranges control

High RF input power handling capability

100 % DC Tested

Low Cost Ceramic Package

** For the tight control of the pinch-off voltage range, we divide TC2876 into 3 model numbers to fit customer design requirement

(1)TC2876P1519 : Vp = -1.5V to -1.9V (2)TC2876P1620 : Vp = -1.6V to -2.0V (3)TC2876P1721 : Vp = -1.7V to -2.1V

If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.

Output Power at 1dB Gain Compression Point , f = 6 GHz V

Linear Power Gain, f = 6 GHz V

Intercept Point of the 3

Power Added Efficiency at 1dB Compression Power, f = 6 GHz

Saturated Drain-Source Current at V

Transconductance at V

Pinch-off Voltage at V

Drain-Gate Breakdown Voltage at I

Thermal Resistance

SCL

: Output Power of Single Carrier Level.

5 W Low-Cost Packaged PHEMT GaAs Power FETs

-order Intermodulation, f = 6 GHz V

DGO

= 2 V, I

= 2 V, V

Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

18 V

= 24 mA

DGO

= 8 V, I

= 0 V

= 2 V, V

=6 mA

CONDITIONS

= 1200 mA

=25 C)

Phone: 886-6-5050086

= 0 V

P 1/2

= 8 V, I

= 1200 mA

= 1200 mA, *P

PHOTO ENLARGEMENT

Fax: 886-6-5051602

SCL

= 23 dBm

MIN

-1.7**

TYP

2000

36.5

3.5

REV4_20070507

TC2876

MAX UNIT

Volts

dBm

C/W

Related parts for TC2876

TC2876 Summary of contents

Page 1

... Output Power of Single Carrier Level. SCL ** For the tight control of the pinch-off voltage range, we divide TC2876 into 3 model numbers to fit customer design requirement (1)TC2876P1519 : Vp = -1.5V to -1.9V (2)TC2876P1620 : Vp = -1.6V to -2.0V (3)TC2876P1721 : Vp = -1.7V to -2.1V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. ...

Page 2

... The static discharge must be less than 300V. 2 PLCS Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 P 2/2 Parameter Drain to Source Voltage DS I Drain Current D 2 PLCS 4 PLCS 4 PLCS 4 PLCS 4 SIDES Fax: 886-6-5051602 TC2876 REV4_20070507 Rating 8 V 1200 mA ...

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