CSDXXX60 CREE [Cree, Inc], CSDXXX60 Datasheet - Page 8

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CSDXXX60

Manufacturer Part Number
CSDXXX60
Description
Introducing SiC Schottky Diode
Manufacturer
CREE [Cree, Inc]
Datasheet
New “QFN” Package - C3D1P7060Q
• Key Electrical Parameters
• Package
• Benefits
Copyright © 2012, Cree, Inc.
 Forward Rated Current: 1.7A @ T
 Reverse Blocking Voltage: 600V
 Forward Voltage: 1.7V @ 100˚C
 Total Charge Q
 Total Charge Q
 Smallest SiC package in the market
 Smallest SiC package in the market
 3.3 x 3.3 x 1mm QFN Surface Mount
 Higher driver efficiency =
 Lower thermals for diode surrounding components
 Lower thermals for diode, surrounding components
 Smaller footprint
C
C
: 5.6 nC
: 5.6 nC
Higher Lm/W
C
< 150 ˚C
pg. 8

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