LMBT3946DW1T1 LRC [Leshan Radio Company], LMBT3946DW1T1 Datasheet

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LMBT3946DW1T1

Manufacturer Part Number
LMBT3946DW1T1
Description
Dual General Purpose Transistors
Manufacturer
LRC [Leshan Radio Company]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LMBT3946DW1T1G
Manufacturer:
LRC
Quantity:
21 562
Part Number:
LMBT3946DW1T1G
Manufacturer:
LRC/乐山
Quantity:
20 000
THERMAL CHARACTERISTICS
Dual General Purpose
Transistors
MAXIMUM RATINGS
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1.
Thermal Resistance Junction
Total Package Dissipation
Emitter-Base Voltage
Electrostatic Discharge
recommended footprint.
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current-Continuous
Junction and Storage
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low–power surface mount
applications where board space is at a premium.
Temperature Range
(NPN)
(NPN)
(NPN)
(PNP)
(PNP)
(PNP)
The LMBT3946DW1T1 device is a spin–off of our popular
(NPN)
(PNP)
Characteristic
• h
• Low V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
• Device Marking: LMBT3946DW1T1 = 46
Rating
FE
to Ambient
T
, 100–300
A
= 25°C
CE(sat)
, < 0.4 V
(1)
Symbol
Symbol
T
V
V
V
R
E
J
P
I
,T
CEO
CBO
EBO
SD
C
D
JA
s t g
HBM>16000,
–55 to +150
Value
MM>2000
-200
-5.0
200
Max
-40
-40
6.0
40
60
150
833
°C/W
mAdc
Unit
mW
Unit
Vdc
Vdc
Vdc
°C
V
LESHAN RADIO COMPANY, LTD.
LMBT3946DW1T1 SOT-363
Device
ORDERING INFORMATION
LMBT3946DW1T1
Q
1
3
4
1
2
SOT-363/SC-88
LMBT3946DW1T1*
Package
LMBT3946DW1T1 1/11
3
*Q1 PNP
Q2 NPN
5
2
6
3000Units/Reel
5
Shipping
1
Q
6
4
2

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LMBT3946DW1T1 Summary of contents

Page 1

... Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low–power surface mount applications where board space premium. • ...

Page 2

... Vdc 6.0 – –5.0 – nAdc – 50 – –50 nAdc – 50 – –50 – 40 – 70 – 100 300 60 – 30 – 60 – 80 – 100 300 60 – 30 – Vdc – 0.2 – 0.3 – –0.25 – –0.4 Vdc 0.65 0.85 – 0.95 –0.65 –0.85 – –0.95 LMBT3946DW1T1 2/11 ...

Page 3

... C pF obo – 4.0 – 4 ibo – 8.0 – 10 1 0.5 8.0 0 – FE 100 400 100 400 h mhos oe 1 – 5.0 – 4.0 t – – – – – 200 s – 225 ns t – – 75 LMBT3946DW1T1 3/11 –4 ...

Page 4

... 125˚C 5000 3000 2000 1000 700 500 300 200 100 1.0 2.0 3.0 LMBT3946DW1T1 +3 V +10.9 V 275 < 4 pF* 1N916 < Equivalent T est Circuit (NPN 5.0 7 100 COLLECTOR CURRENT (mA) Figure 4. Charge Data LMBT3946DW1T1 4/11 200 ...

Page 5

... 5.0 7 100 Figure 6. Rise Time 5.0 7 100 Figure 8. Fall Time 100 A (NPN) 40 1.0 2.0 4 SOURCE RESISTANCE (k OHMS) Figure 10. Noise Figure LMBT3946DW1T1 5/11 200 200 100 ...

Page 6

... COLLECTOR CURRENT (mA) Figure 13. Input Impedance LESHAN RADIO COMPANY, LTD. LMBT3946DW1T1 (NPN) h PARAMETERS ( Vdc 1.0 kHz 25˚C) 100 3.0 5.0 10 0.1 0.2 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 3.0 5.0 10 0.1 0.2 Figure 14. Voltage Feedback Ratio LMBT3946DW1T1 (NPN) 0.3 0.5 1.0 2.0 3.0 5 COLLECTOR CURRENT (mA) Figure 12. Output Admittance (NPN) 0.3 0.5 1.0 2.0 3.0 5 COLLECTOR CURRENT (mA) LMBT3946DW1T1 6/ ...

Page 7

... Figure 18. Temperature Coefficients LMBT3946DW1T1 1.0 V (NPN 100 ˚C 100 mA 1.0 2.0 3.0 5.0 7.0 +25˚C TO +125˚C FOR V CE(sat) VC -55˚C TO +25˚C -55˚C TO +25 ˚C +25 ˚C TO +125 ˚C FOR V BE(sat 100 120 140 160 180 COLLECTOR CURRENT (mA) LMBT3946DW1T1 7/11 200 10 200 ...

Page 8

... Figure 20. Storage and Fall Equivalent Test Circuit (PNP 2.0 3.0 5.0 7 100 COLLECTOR CURRENT (mA) Figure 22. Charge Data (PNP 100 5.0 7 COLLECTOR CURRENT (mA) Figure 24. Fall Time LMBT3946DW1T1 8/ < 4 pF* 200 200 ...

Page 9

... CE = ±10 Vdc 1.0 kHz 25˚C) 100 3.0 5.0 7.0 10 0.1 0.2 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 3.0 5.0 7.0 10 0.1 0.2 Figure 30. Voltage Feedback Ratio LMBT3946DW1T1 =100 A (PNP) 0.4 1.0 2.0 4 SOURCE RESISTANCE (k OHMS) Figure 26. (PNP) 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) Figure 28. Output Admittance (PNP) 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) LMBT3946DW1T1 9/11 100 10 10 ...

Page 10

... Figure 34. T emperature Coefficients LMBT3946DW1T1 1 100 25˚C 100 mA 1.0 2.0 3.0 5.0 7.0 +25˚C +125˚C TO -55˚C TO +25˚C +25˚C TO +125˚C -55˚C TO +25˚C VB FOR V BE(sat) 100 120 140 160 180 COLLECTOR CURRENT (mA) LMBT3946DW1T1 10/11 200 10 200 ...

Page 11

... J K PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4.EMITTER 1 5. BASE 1 6.COLLECTOR 2 1.9 mm LMBT3946DW1T1 INCHES MILLIMETERS MIN MAX MIN MAX 0.071 0.087 1.80 2.20 0.045 0.053 1.15 1.35 0.031 0.043 0.80 1.10 0.004 0.012 0.10 0.30 0.026 BSC 0.65 BSC --- 0.004 --- 0.10 0.004 0.010 0.10 0.25 0.004 0.012 0.10 0.30 0.008 REF 0.20 REF 0.079 0.087 2.00 2.20 LMBT3946DW1T1 11/11 ...

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