D2009UK SEME-LAB [Seme LAB], D2009UK Datasheet - Page 2

• Manufacturer Part Number: D2009UK
• Description: ROHS COMPLIANT METAL GATE RF SILICON FET
• Manufacturer: SEME-LAB [Seme LAB]

ELECTRICAL CHARACTERISTICS
* Pulse Test:
THERMAL DATA
Semelab plc.
BV
I
I
V
g
G
η
VSWR
C
C
C
DSS
GSS
fs
R
GS(th)
iss
oss
rss
PS
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THj–case
DSS
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Pulse Duration = 300 μs , Duty Cycle ≤ 2%
Telephone [phone]. Fax [phone].
E-mail:
[e-mail]
Thermal Resistance Junction – Case
HAZARDOUS MATERIAL WARNING
V
V
V
(T
DS
DS
DS
case
V
V
V
I
V
P
V
f = 1GHz
D
GS
DS
GS
DS
O
DS
Website:
= 28V
= 28V
= 28V
= 10mA
= 10W
= 25°C unless otherwise stated)
= 28V
= 10V
= 28V
= 0
= 20V
Test Conditions
TOTAL DEVICE
PER SIDE
PER SIDE
http://www.semelab.co.uk
V
V
V
GS
GS
GS
= –5V f = 1MHz
= 0
= 0
I
V
V
V
I
I
D
D
DQ
GS
DS
DS
= 10mA
= 2A
= 0.4A
= 0
= V
= 0
f = 1MHz
f = 1MHz
GS
Min.
0.36
20:1
65
10
40
1
Typ.
Document Number 5535
D2009UK
Max. 3.0°C / W
Max. Unit
24
12
2
1
7
1
Issue 1
mA
μA
dB
pF
pF
pF
—
%
V
V
S