D2013 SEME-LAB [Seme LAB], D2013 Datasheet - Page 3

• Manufacturer Part Number: D2013
• Description: METAL GATE RF SILICON FET
• Manufacturer: SEME-LAB [Seme LAB]

Semelab plc.
,0'
G%F
3 RXW
:














OutputPower and Gain vs. Input Power.



IMD Vs. Output Power.
Telephone [phone]. Fax [phone].
E-mail: [e-mail]


Figure 1
Figure 3
!
#
!Freq
!MHz
100
200
300
400
500
600
700
800
900
1000
3 LQ :
3 RXW :3(3


Vds=28V, Idq=0.8A
MHz S MA R 50
I
, GT
9GV
0.841
0.871
0.891
0.902
0.923
0.933
0.955
0.955
0.966
0.955
mag
S11
I 
I 
9 GV  9

3RXW
*DLQ
0+]
  0+]

*+]
$
9
-122
-146
-156
-163
-170
-174
-175
-177
ang
179
177
Typical S Parameters

,GT $
,GT $
Website: http://www.semelab.co.uk

24.547
11.482

















6.683
4.365
3.055
2.113
1.758
1.413
1.161
0.944
mag
S21
*DLQ
G%

ang
98 0.01318
69
52 0.00653
40 0.00596
27 0.00891
22 0.01349
19 0.01862
12 0.02344
3 RXW
:
5 0.02851
3 0.03236





Output Power and efficiency vs. Input Power.


OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
mag
0.01

S12
1000MHZ
MHz

ang
13
10
49
71
79
85
82
80
80
0
0.708
0.767
0.813
0.851
0.881
0.902
0.902
0.902

mag
0.49
0.61
S22
3 LQ :
I
, GT
9 GV
Figure 2
1.3 - j4.6

Z S
-125
-137
-146
-155
-165
-166
-170
-177
-179
W W W W
ang
-94
*+]
$
9
3RXW
'UDLQ(IILFLHQF\

D2013UK








2.5 - j2.6
'UDLQ(IILFLHQF\

Prelim.12/00
Z L
W W W W