1N50Z UTC [Unisonic Technologies], 1N50Z Datasheet - Page 3

• Manufacturer Part Number: 1N50Z
• Description: 1.3A, 500V N-CHANNEL POWER MOSFET
• Manufacturer: UTC [Unisonic Technologies]

1N50Z
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
ELECTRICAL CHARACTERISTICS(Cont.)
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
SYMBOL
t
Preliminary
t
D(OFF)
Q
Q
Q
D(ON)
V
Q
I
t
t
I
SM
t
GS
GD
R
SD
RR
F
S
rr
G
V
(Note 1, 2)
V
(Note 1, 2)
I
I
dI
S
S
GS
DD
=1.3A, V
=1.5A, V
F
/dt=100A/µs (Note 1)
=10V, V
=250V, I
TEST CONDITIONS
GS
GS
DS
D
=0V
=0V,
=1.5A, R
=400V, I
G
D
=25Ω
=1.5A
Power MOSFET
MIN TYP MAX UNIT
0.54
162
1.6
5.5
11
12
13
42
15
QW-R502-726.b
1.15
1.3
16
35
35
90
40
5
3 of 6
nC
nC
nC
µC
ns
ns
ns
ns
ns
A
A
V