MMBT5550G ZOWIE [Zowie Technology Corporation], MMBT5550G Datasheet

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MMBT5550G

Manufacturer Part Number
MMBT5550G
Description
High Voltage Transistors
Manufacturer
ZOWIE [Zowie Technology Corporation]
Datasheet
REV. 0
High Voltage Transistors
Lead free product
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
FEATURE
( V
( V
( V
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector–Emitter Breakdown Voltage(3)
(I
Collector–Base Breakdown Voltage
(I
Emitter–Base Breakdown Voltage
(I
Collector Cutoff Current
( V
Emitter Cutoff Current
( V
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Zowie Technology Corporation
A
C
C
E
CB
CB
= 25°C
= 100 µAdc, I
= 10 µAdc, I
CB
= 1.0 mAdc, I
CB
BE
MMBT5550G
MMBT5551G
We declare that the material of product
compliance with RoHS requirements.
= 100Vdc, I
= 120Vdc, I
= 100Vdc, I
= 120Vdc, I
= 4.0Vdc, I
Rating
Characteristic
C
= 0)
B
E
C
E
E
E
= 0)
= 0)
E
= 0)
= 0)
= 0, T
= 0)
= 0, T
A
= 25°C
A
A
=100 °C)
=100 °C)
Symbol
V
V
V
I
CEO
CBO
EBO
C
(T
A
= 25°C unless otherwise noted.)
MMBT5551G
MMBT5550G
MMBT5551G
MMBT5550G
MMBT5551G
MMBT5550G
MMBT5550G
MMBT5551G
Value
140
160
600
6.0
Symbol
T
J
R
R
P
P
, T
θJA
θJA
D
D
stg
Symbol
V
V
V
mAdc
I
I
(BR)CEO
(BR)CBO
(BR)EBO
Unit
Vdc
Vdc
Vdc
CBO
EBO
1
–55 to +150
SOT-23
Max
225
300
417
2
1.8
556
2.4
3
160
140
160
180
Min
6.0
mW/°C
mW/°C
°C/W
°C/W
Unit
mW
mW
°C
100
100
Max
50
50
50
1
BASE
nAdc
µAdc
nAdc
Vdc
Unit
Vdc
Vdc
Zowie Technology Corporation
3
COLLECTOR
2
EMITTER

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MMBT5550G Summary of contents

Page 1

... –55 to +150 J stg (T = 25°C unless otherwise noted.) A Symbol V (BR)CEO MMBT5550G MMBT5551G V (BR)CBO MMBT5550G MMBT5551G V (BR)EBO I CBO MMBT5550G MMBT5551G MMBT5550G MMBT5551G I EBO 3 COLLECTOR 3 1 BASE 2 EMITTER Unit mW mW/°C °C/W mW mW/°C °C/W °C Min Max Unit Vdc 140 — ...

Page 2

... mAdc 5.0 mAdc REV 25°C unless otherwise noted) (Continued) Symbol MMBT5550G MMBT5551G MMBT5550G MMBT5551G MMBT5550G MMBT5551G V Both Types MMBT5550G MMBT5551G V Both Types MMBT5550G MMBT5551G Min Max Unit h –– FE — 60 — 80 250 60 80 250 20 — 30 — Vdc CE(sat) — ...

Page 3

... BASE–EMITTER VOLTAGE (VOLTS) BE Figure 3. Collector Cut–Off Region REV. 0 0.5 0.7 1.0 2.0 3 COLLECTOR CURRENT (mA) C Figure 15. DC Current Gain 10 mA 0.05 0.1 0.2 0 BASE CURRENT (mA) B Figure 16. Collector Saturation Region CES FORWARD 0 0.1 0.2 0.3 0.4 0.5 0.6 MMBT5550G MMBT5551G 5.0 7 100 mA 1.0 2.0 5 25° BE(sat 0.6 0.4 0 CE(sat) C ...

Page 4

... V f 1000 500 300 120 200 100 50 0.2 0.3 0.5 1.0 2.0 3.0 5 COLLECTOR CURRENT (mA) C Figure 9. Turn–Off Time MMBT5550G MMBT5551G 10 –8 100 0. INPUT PULSE 5.1 k 100 < DUTY CYCLE = 1.0% Values Shown are for Figure 6 ...

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