RGP02-12E_06 EIC [EIC discrete Semiconductors], RGP02-12E_06 Datasheet - Page 2

• Manufacturer Part Number: RGP02-12E_06
• Description: HIGH VOLTAGE
• Manufacturer: EIC [EIC discrete Semiconductors]

Page 2 of 2
0.001
0.01
0.5
0.4
0.3
0.2
0.1
1.0
0.1
0
0.6
0
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
FIG.2 - DERATING CURVE FOR OUTPUT
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
60Hz RESISTIVE OR INDUCTIVE LOAD
RATING AND CHARACTERISTIC CURVES ( RGP02-12E - RGP02-20E )
Pulse Width = 300 μs
0.8
25
AMBIENT TEMPERATURE, (
2% Duty Cycle
FORWARD VOLTAGE, VOLTS
T
RECTIFIED CURRENT
1.0
J
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
= 25 °C
+
50
1.2
(approx)
50 Vdc
75
1.4
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
50 Ω
1.6
100
1.8
125
1 Ω
D.U.T.
2.0
10 Ω
150
2.2
°
C)
2.4
175
OSCILLOSCOPE
2.6
( NOTE 1 )
GENERATOR
( NOTE 2 )
PULSE
0.01
25
1.0
20
15
10
0.1
5
0
10
0
1
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PERCENT OF RATED REVERSE
- 1.0 A
- 0.25
NUMBER OF CYCLES AT 60Hz
+ 0.5
20
2
0
FORWARD SURGE CURRENT
8.3 ms SINGLE HALF SINE WAVE
40
4
1
VOLTAGE, (%)
SET TIME BASE FOR 50/100 ns/cm
6
60
Trr
10
T
T
J
J
80
Ta = 50 °C
= 100 °C
= 25 °C
20
100
Rev. 03 : February 20, 2006
40
120
60 100
140