ESH1PB-E385A VISHAY [Vishay Siliconix], ESH1PB-E385A Datasheet

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ESH1PB-E385A

Manufacturer Part Number
ESH1PB-E385A
Description
Vishay General Semiconductor
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Document Number: 88895
Revision: 25-Jun-07
MAJOR RATINGS AND CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 10 ms single half sine-
wave superimposed on rated load
Operating junction and storage temperature range
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward
voltage
Maximum reverse current at rated
V
Maximum reverse current
R
(1)
voltage
(1)
High Current Density Surface Mount Ultrafast Rectifiers
T
V
I
j
F(AV)
RRM
V
max.
t
rr
F
eSMP
DO-220AA (SMP)
TM
Series
A
at I
at I
T
T
at V
j
j
= 25 °C unless otherwise noted)
= 25 °C
= 125 °C
F
F
100 V, 150 V, 200 V
R
= 0.7 A, T
= 1 A, T
= 20 V, T
175 °C
0.90 V
25 ns
1 A
j
= 25 °C
j
j
= 25 °C
= 150 °C
A
SYMBOL
= 25 °C unless otherwise noted)
T
TEST CONDITIONS
J
V
I
New Product
I
F(AV)
, T
FSM
RRM
STG
FEATURES
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds of ac-to-ac and dc-to-dc
converters in high temperature conditions for both
consumer and automotive applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL-94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast recovery times for high frequency
• Low forward voltage drop, low power loss
• Low thermal resistance
• Meets MSL level 1 per J-STD-020C, LF max peak
• Component in accordance to RoHS 2002/95/EC
ESH1PB
100
of 260 °C
and WEEE 2002/96/EC
PB
ESH1PB, ESH1PC & ESH1PD
Vishay General Semiconductor
- 55 to + 175
ESH1PC
150
PC
1.0
50
SYMBOL
V
I
I
R
R
F
ESH1PD
200
PD
VALUE
0.86
0.90
1.0
25
50
www.vishay.com
UNIT
UNIT
µA
µA
°C
V
A
A
V
1

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ESH1PB-E385A Summary of contents

Page 1

... Maximum reverse current Document Number: 88895 Revision: 25-Jun-07 New Product ESH1PB, ESH1PC & ESH1PD FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction • Ultrafast recovery times for high frequency • Low forward voltage drop, low power loss • ...

Page 2

... ESH1PB, ESH1PC & ESH1PD Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Maximum reverse recovery time 0 1 Typical reverse recovery time 1 1 Typical reverse recovery time 1 Typical junction capacitance at 4 MHz Note: (1) Pulse test: 300 µs pulse width duty cycle ...

Page 3

... Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) 0.013 (0.35) 0.004 (0.10) 0.012 (0.30) 0.000 (0.00) Document Number: 88895 Revision: 25-Jun-07 New Product ESH1PB, ESH1PC & ESH1PD 1000 100 10 1 1.4 1.6 0.1 1000 100 100 0.01 Figure 6 ...

Page 4

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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