2mbi200sb-120 Fuji Electric holdings CO.,Ltd, 2mbi200sb-120 Datasheet
2mbi200sb-120
Manufacturer Part Number
2mbi200sb-120
Description
Igbt Module S Series 1200v / 200a / 2 In One Package
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.2MBI200SB-120.pdf
(6 pages)
2MBI200SB-120
IGBT MODULE (S series)
1200V / 200A / 2 in one package
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 2.5-3.5 N·m (M5 or M6), Terminals : 3.5-4.5 N·m (M6)
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Items
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Isolation voltage (*1)
Screw torque
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Items
Thermal resistance (1device)
Contact thermal resistance
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Thermal resistance characteristics
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Symbols
I
I
V
V
Cies
Coes
Cres
ton
tr
tr (i)
toff
tf
V
trr
Symbols
Rth(j-c)
Rth(c-f)
CES
GES
GE (th)
CE (sat)
F
Symbols
V
V
Ic
Ic pulse
-Ic
-Ic pulse
Pc
Tj
Tstg
V
Mounting (*2)
Terminals (*2)
CES
GES
iso
Conditions
V
V
V
V
I
V
V
f = 1MHz
V
I
V
R
I
I
Conditions
IGBT
FWD
with Thermal Compound (*3)
C
C
F
F
GE
CE
CE
GE
GE
CE
CC
GE
G
= 200A
= 200A
= 200A
= 200A
= 4.7Ω
= 0V, V
= 10V
= 0V, V
= 20V, I
= 15V
= 0V
= 600V
= ±15V
1
Conditions
Continuous
1ms
1ms
1 device
AC : 1min.
CE
GE
C
= ±20V
= 1200V
= 200mA
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Maximum ratings
min.
min.
5.5
-40 to +125
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Characteristics
Characteristics
1200
1500
2500
±20
300
200
600
400
200
400
150
3.5
4.5
24000
0.025
5000
4400
0.35
0.25
0.45
0.08
typ.
typ.
7.2
2.3
2.8
0.1
2.3
2.0
-
-
-
-
-
IGBT Modules
0.085
max.
max.
0.35
0.18
1.0
0.4
8.5
2.6
1.2
0.6
1.0
0.3
3.0
-
-
-
-
-
-
-
Units
N·m
°C
°C
W
V
V
A
V
Units
Units
°C/W
mA
µA
pF
µs
µs
V
V
V
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