S80830 SII [Seiko Instruments Inc], S80830 Datasheet - Page 26

no-image

S80830

Manufacturer Part Number
S80830
Description
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Manufacturer
SII [Seiko Instruments Inc]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S80830ALY
Manufacturer:
SEIKO
Quantity:
19 802
Part Number:
S80830CLY
Manufacturer:
SEIKO
Quantity:
9 660
Part Number:
S80830CNY
Manufacturer:
SEIKO
Quantity:
18 872
*1. −V
*2. Specified detection voltage value (−V
*3. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
26
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
Leakage current
Response time
Detection voltage
temperature
coefficient
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in
• In CMOS output products of the S-808xxC series, the through-type current flows at the detection and the
• In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the
• When designing for mass production using an application circuit described herein, the product deviation and
• SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of the
Precautions
3. S-80846KNUA-D2C-T2, S-80846KNY-x
electrostatic protection circuit.
release. If the input impedance is high, oscillation may occur due to the voltage drop by the through-type
current during releasing.
power supply voltage (V
temperature characteristics should be taken into consideration. SII shall not bear any responsibility for the
products on the circuits described herein.
products including this IC upon patents owned by a third party.
DET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Item
: Actual detection voltage value
*3
Ta
V
DET
*1
[
mV/
°
C
]
Ta
*1
Symbol
−V
V
I
=
V
I
t
LEAK
I
OUT
PLH
HYS
DD
SS
V
DD
DET
DET
V
V
) is slow near the detection voltage.
DET(S)
DET
Output transistor,
Nch, V
Output transistor,
Nch, V
(
Typ.
DET(S)
) [ ]
Ta=−40°C to 85°C
DD
DS
V
Seiko Instruments Inc.
)
=10.0 V, V
=0.5 V
2 *
V
Condition
×
DD
=6.0 V
Table 20
Ta
V
V
V
DS
DET
V
DD
DD
=10.0 V
DET
=1.2 V
=2.4 V
[
ppm/
°
C
4.500
0.95
0.59
2.88
Min.
]
3 *
÷
(Ta=25°C unless otherwise specified)
1000
4.600
±100
Typ.
0.05
1.36
4.98
0.9
*2
4.700
±350
Max.
0.10
10.0
2.7
0.1
60
ppm/°C
Rev.3.2
Unit
mA
µA
µA
µs
V
V
circuit
Test
_00
1
2
1
3
1

Related parts for S80830