BTA06-800BRG STMICROELECTRONICS [STMicroelectronics], BTA06-800BRG Datasheet - Page 4

• Manufacturer Part Number: BTA06-800BRG
• Description: 6A TRIACS
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

BTA06 and BTB06 Series
Figure 5: Surge peak on-state current versus
number of cycles
Figure 7: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Standard types)
4/7
2.5
2.0
1.5
1.0
0.5
0.0
70
60
50
40
30
20
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
-40
0.1
1
I
I
TSM
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
GT H L
B
,I ,I [T ] /
(A)
-20
I
H
& I
C
L
Repetitive
T =105°C
C
I
j
GT
0
I
GT H L
,I ,I [T =25°C]
10
1.0
20
Non repetitive
T initial=25°C
j
(dV/dt)c (V/µs)
Number of cycles
j
40
T (°C)
j
60
10.0
100
80
100
t=20ms
One cycle
120
100.0
1000
140
Figure 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
and corresponding value of I
Figure 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Snubberless & logic level
types)
Figure 10: Relative variation of critical rate of
decrease of main current versus junction
temperature
1000
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
6
5
4
3
2
0
1
100
0
10
(dI/dt)c [T ] /
0.1
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
0.01
I
TSM
SW
(A), I t (A s)
j
25
dI/dt limitation:
(dI/dt)c [T s
2
50A/µs
2
1.0
0.10
(dV/dt)c (V/µs)
j
50
pecified]
TW
T (°C)
t (ms)
p
j
2
75
t
10.0
1.00
100
BW/CW
T initial=25°C
p
j
< 10 ms
I
TSM
I t
2
100.0
10.00
125