1N582X STMICROELECTRONICS [STMicroelectronics], 1N582X Datasheet
![no-image](/images/no-image-200.jpg)
1N582X
Related parts for 1N582X
1N582X Summary of contents
Page 1
... Rth j a July 1999 - Ed 150°C 0.475 V wheeling, polarity Parameter T = 100 0 110 0 Sinusoidal 1N582x DO-201AD Value 1N5820 1N5821 1N5822 150 150 10000 Unit ° ...
Page 2
... THERMAL RESISTANCES Symbol R Junction to ambient th (j-a) R Junction to lead th (j-l) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter I * Reverse leakage R current Forward voltage drop Pulse test : * tp = 380 s, < evaluate the conduction losses use the following equations : 0. 0.035 I F(AV) F (RMS ) 0. 0.060 I ...
Page 3
... Fig. 5: Junction capacitance versus reverse voltage applied (typical values). C(pF) 600 100 T =tp 1E+2 1E+3 1 Rth(j-a)=Rth(j-l)=25°C/W Rth(j-a)=80°C/W T Tamb(°C) tp =tp 100 Non repetitive surge peak forward t t(s) =0.5 1E-2 1E-1 1N5820 1N5822 VR( 1N582x 125 150 Ta=25°C Ta=75°C Ta=100°C 1E+0 F=1MHz Tj=25°C 1N5821 20 40 3/5 ...
Page 4
... Fig. 6-1: Reverse leakage current versus reverse voltage applied (typical values) (1N5820/1N5821). IR(mA) 1E+2 1N5820 Tj=125°C 1E+1 1E+0 Tj=100°C 1E-1 Tj=25°C 1E-2 VR(V) 1E Fig. 7-1: Forward voltage drop versus forward current (typical values) (1N5820/1N5821). IFM(A) 50.00 10.00 Tj=125°C Tj=100°C 1.00 Tj=25°C 0.10 VFM(V) 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Fig. 8: Non repetitive surge peak forward current versus number of cycles ...
Page 5
... Package Weight DO-201AD 1.12g DO-201AD 1.12g STMicroelectronics GROUP OF COMPANIES http://www.st.com B ØC NOTES D is not controlled over zone E Base qty Delivery mode 600 Ammopack 1900 Tape & reel 1N582x 5/5 ...