STB100NF04_07 STMICROELECTRONICS [STMicroelectronics], STB100NF04_07 Datasheet - Page 4

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STB100NF04_07

Manufacturer Part Number
STB100NF04_07
Description
N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 3.
Table 4.
Symbol
V
CASE
Symbol
R
V
t
t
(BR)DSS
C
C
C
Q
Q
d(on)
d(off)
gfs
I
I
Q
DS(on)
GS(th)
DSS
GSS
oss
t
t
rss
iss
gs
gd
r
f
g
=25°C unless otherwise specified)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise time
Turn-off delay Time
Fall Time
On/off
Dynamic
Drain-source Breakdown
Voltage
Zero Gate Voltage Drain
Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Parameter
Parameter
GS
DS
=0)
=0)
I
V
V
V
V
V
D
GS
GS
DS
DS
DS
=250µA, V
=Max Rating
=Max Rating Tc=125°C
=±20V
=V
=10V, I
V
V
V
V
V
R
(see
GS
DS
DS
DD
DD
GS,
G
Test conditions
=4.7Ω , V
=15V, I
=25V, f=1MHz,V
=32V, I
=10V
=20V, I
Test conditions
Figure
I
D
D
=250µA
=50A
GS
=0
D
D
D
GS
21)
=50A
=120A
=60A
=10V
GS
=0
STB100NF04 - STP100NF04
Min.
Min
40
2
0.0043 0.0046
5100
1300
Typ.
Typ.
150
160
110
220
35
70
35
80
50
Max.
Max.
±100
150
10
1
4
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S

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