IDT71T75702 IDT [Integrated Device Technology], IDT71T75702 Datasheet - Page 6

• Manufacturer Part Number: IDT71T75702
• Description: 512K x 36, 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs
• Manufacturer: IDT [Integrated Device Technology]

NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
NOTES:
1. Pins 14 and 66 do not have to be connected directly to V
2. Pin 16 does not have to be connected directly to V
3. Pins 38, 39 and 43 will be pulled internally to V
4. Pin 43 is reserved for the 36M address. JTAG is not offered in the 100-pin
V
V
V
V
V
V
I/O
I/O
I/O
I/O
I/O
I/O
I/O
DD
SS
DDQ
V
I/O
I/O
V
DDQ
V
V
DDQ
V
V
DDQ
IDT71T75702, IDT71T75902, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter and Flow-Through Outputs
NC
NC
NC
NC
NC
NC
NC
NC
NC
Symbol
Symbol
DD
SS
SS
SS
SS
SS
P2
10
11
12
13
14
15
(1)
(2)
input voltage is < V
is > V
disable the TAP controller without interfering with normal operation, several
settings are possible. Pins 38, 39 and 43 could be tied to V
pin 42 should be left unconnected. Or all JTAG inputs (TMS, TDI and TCK)
pins38, 39 and 43 could be left unconnected “NC” and the JTAG circuit will
remain disabled from power up.
TQFP package for the 36M ZBT device.
8
9
C
C
C
C
I/O
I/O
IN
IN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
IH
.
100 99 98 97 96 95 94 93 92 91 90
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Input Capacitance
I/O Capacitance
Input Capacitance
I/O Capacitance
Parameter
Parameter
IL
.
(1)
(1)
89 88
V
V
Conditions
Conditions
V
V
OUT
OUT
87 86 85 84 83 82 81
IN
IN
DD
= 3dV
= 3dV
DD
= 3dV
= 3dV
as long as the input voltage
if not actively driven. To
SS
DD
as long as the
Max.
Max.
or V
5
7
7
7
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
5319 drw 02a
SS
5319 tbl 07a
5319 tbl 07
and
Unit
Unit
pF
pF
NC
NC
V
NC
I/O
I/O
I/O
I/O
I/O
V
V
V
V
I/O
I/O
NC
NC
pF
pF
A
V
V
V
V
ZZ
I/O
I/O
V
V
NC
NC
NC
SS
SS
DD
DDQ
SS
10
DDQ
SS
DDQ
SS
SS
DDQ
P1
7
6
5
4
3
2
1
0
(1)
6.42
6
,
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
2. V
3. V
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supply has
7. During production testing, the case temperature equals T
P
I
V
V
V
V
T
T
T
OUT
A
BIAS
STG
T
TERM
TERM
TERM
TERM
(7)
Symbol
Symbol
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any input or I/O pin cannot exceed V
supply ramp up.
C
DD
DDQ
C
(2)
(3,6)
(4,6)
(5,6)
I/O
IN
terminals only.
terminals only.
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Operating Ambient
Temperature
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Input Capacitance
I/O Capacitance
Commercial and Industrial Temperature Ranges
Rating
Parameter
(1)
-0.5 to V
-0.5 to V
Commercial
-0.5 to +3.6
-55 to +125
-55 to +125
-0.5 to V
0 to +70
2.0
50
DDQ
DD
V
DD
Conditions
+0.5
V
+0.5
OUT
IN
= 3dV
= 3dV
-0.5 to V
-0.5 to V
-0.5 to +3.6
-55 to +125
-55 to +125
-0.5 to V
-40 to +85
Industrial
A
.
2.0
50
DDQ
DDQ
DD
Max.
DD
+0.5
+0.5
during power
7
7
5319 tbl 07b
5319 tbl 06
Unit
Unit
pF
pF
mA
V
V
V
V
o
o
o
W
C
C
C