TS1220-600H-TR STMICROELECTRONICS [STMicroelectronics], TS1220-600H-TR Datasheet - Page 4

• Manufacturer Part Number: TS1220-600H-TR
• Description: SENSITIVE & STANDARD(12A SCRs)
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

TN12, TS12 and TYNx12 Series
Figure 3: Average and D.C. on-state current
versus ambient temperature (device mounted
on FR4 with recommended pad layout) (DPAK)
Figure
impedance junction to ambient versus pulse
duration (recommended pad layout, FR4 PC
board for DPAK)
Figure 7: Relative variation of gate trigger
current and holding current versus junction
temperature for TN8 & TYN08 series
4/11
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.00
0.10
0.01
-40
1E-2
I
I
0
GT H L
T(AV)
K=[Z
,I ,I [T ] /
-20
(A)
= 180°
th(j-a)
5:
I
GT
j
25
/R
1E-1
DPAK
0
Relative
I
th(j-a)
GT H L
,I ,I [T =25°C]
D PAK
D.C.
2
20
]
50
1E+0
j
D PAK
T
2
40
T (°C)
amb
t (s)
j
p
DPAK
variation
(°C)
60
75
1E+1
TO-220AB / IPAK
80
of
100
100
I
H
1E+2
& I
L
thermal
120
5E+2
125
140
Figure
impedance junction to case versus pulse
duration
Figure 6: Relative variation of gate trigger
current and holding current versus junction
temperature for TS8 series
Figure 8: Relative variation of holding current
versus
values) for TS8 series
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.5
0.2
0.1
1E-2
1E-3
-40
I [R
I
K=[Z
H
GT H L
,I ,I [T ] /
GK
th(j-c)
-20
] / I [
4:
gate-cathode
H
/R
j
I
GT
R
th(j-c)
0
Relative
I
GK
GT H L
=1k ]
,I ,I [T =25°C]
1E-1
1E-2
]
20
j
R
40
T (°C)
GK
t (s)
j
p
variation
(k )
resistance
60
1E+0
1E-1
80
R
GK
I
H
& I
= 1k
of
100
L
T
j
thermal
(typical
= 25°C
120
1E+0
1E+1
140