TS8 STMICROELECTRONICS [STMicroelectronics], TS8 Datasheet - Page 2

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TS8

Manufacturer Part Number
TS8
Description
8A SCRS
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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TN8, TS8 and TYNx08 Series
Table 3: Absolute Ratings (limiting values)
Tables 4: Electrical Characteristics (T
2/10
Symbol
Symbol
I
P
T(RMS)
IT
V
dV/dt
I
I
I
dI/dt
V
V
V
SENSITIVE
V
T
I
G(AV)
DRM
RRM
TSM
I
V
RGM
R
GM
I
T
GT
I
(AV)
I
stg
GT
GD
RG
TM
²
H
L
t0
t
d
j
V
V
I
I
I
V
I
Threshold voltage
Dynamic resistance
V
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle) T
Non repetitive surge peak on-
state current
I
Critical rate of rise of on-state
current I
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage (for TN8 & TYN08 only)
²
RG
T
G
TM
t Value for fusing
D
D
D
DRM
= 50 mA
= 1 mA
= 12 V
= V
= 65 % V
= 16 A
= 10 µA
= V
DRM
G
RRM
= 2 x I
R
tp = 380 µs
DRM
R
R
GK
GK
R
L
GT
L
= 3.3 k
R
= 1 k
= 1 k
= 140
GK
, t
R
r
GK
= 220
100 ns F = 60 Hz
= 220
Test Conditions
Parameter
R
j
GK
= 25°C, unless otherwise specified)
= 220
t
t
t
t
p
p
p
p
= 8.3 ms
= 10 ms
= 10 ms
= 20 µs
T
T
T
T
T
T
T
j
j
j
j
j
j
j
= 125°C
= 125°C
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
T
T
T
T
T
T
c
c
j
j
j
j
j
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
= 110°C
= 110°C
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
TS8/TN8
24.5
73
70
- 40 to + 150
- 40 to + 125
Value
TS820
50
8
5
4
1
5
0.85
200
0.8
0.1
1.6
46
8
5
6
5
5
1
TYN08
100
95
45
Unit
V/µs
m
mA
mA
mA
µA
µA
Unit
A/µs
A
V
V
V
V
V
°C
W
A
A
A
A
V
2
S

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