SST108_SOT-23 MICROSS [Micross Components], SST108_SOT-23 Datasheet

SST108_SOT-23

Manufacturer Part Number

SST108_SOT-23

Description

N-CHANNEL JFET

Manufacturer

MICROSS [Micross Components]

Datasheet

1.SST108_SOT-23.pdf (1 pages)

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SST108 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SST108 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SST108 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)

SST108 SWITCHING CIRCUIT PARAMETERS

SST108 Benefits:

Micross Components Europe

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

This n-channel JFET is optimised for low noise high

performance switching. The part is particularly suitable

for use in low noise audio amplifiers. The SOT-23

package is well suited for cost sensitive applications

and mass production.

(See Packaging Information).

SST108 Applications:

Note 1 ‐ Absolute maximum ratings are limiting values above which SST108 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%

Tel: +44 1603 788967

Email:

Web:

SYMBOL

DS(on)

GS(off)

D(off)

D(on)

d(on)

d(off)

GS(F)

DSS

GSS

GS(L)

iss

rss

GSS

http://www.micross.com/distribution

chipcomponents@micross.com

Low On Resistance

Low insertion loss

Low Noise

Analog Switches

Commutators

Choppers

Click To Buy

Linear Systems replaces discontinued Siliconix SST108

Drain to Source Saturation Current (Note 2)

Gate to Source Breakdown Voltage

10mA

150Ω

‐12V

Gate to Source Forward Voltage

Drain to Source On Resistance

Gate to Source Cutoff Voltage

Reverse Transfer Capacitance

Forward Transconductance

Turn On Rise Time

Turn Off Fall Time

Equivalent Noise Voltage

CHARACTERISTIC

Gate Operating Current

Turn Off Time

Gate Reverse Current

Turn On Time

Output Conductance

Drain Cutoff Current

Input Capacitance

CHARACTERISTIC

Available Packages:

SST108 in SOT-23

SST108 in bare die.

Please contact Micross for full

package and die dimensions

N-CHANNEL JFET

MIN

SST108

‐25

UNITS

‐3

‐‐

FEATURES

DIRECT REPLACEMENT FOR SILICONIX SST108

LOW ON RESISTANCE

FAST SWITCHING

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Gate Current (Note 1)

MAXIMUM VOLTAGES

Gate to Drain Voltage

Gate to Source Voltage

‐0.01

0.02

TYP.

0.7

0.6

3.5

‐‐

SOT-23 (Top View)

MAX

‐10

‐3

‐‐

nV/√Hz

UNITS

See Switching Circuit

CONDITIONS

(H) = 0V

= 1.5V

SWITCHING TEST CIRCUIT

= 5V, I

= 0V, V

= 5V, I

= 0V, V

= 0V, I

= 1mA, V

= 1µA, V

= 10V, I

= 5V, V

CONDITIONS

= ‐15V, V

= 0V, V

CONDITIONS

= 15V, V

= 5V, I

= 10mA , f = 1kHz

= 0A, f = 1kHz

= ‐10V, f = 1MHz

‐55°C to +150°C

= 0V, f = 1MHz

DS(on)

= 1µA

= 10mA

GDS

GSS

(on)

350mW

≤ 0.1V

= ‐10V

50mA

= 0V

= ‐25V

≤ 4ns

≤ 8Ω

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