p320db90vi Meet Spansion Inc., p320db90vi Datasheet - Page 46

• Manufacturer Part Number: p320db90vi
• Description: 32 Megabit 2 M X 16-bit/1 M X 32-bit Cmos 3.0 Volt-only High Performance Page Mode Flash Memory
• Manufacturer: Meet Spansion Inc.

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all inputs except V
DATA RETENTION
* For reference only. BSC is an ANSI standard for Basic Space Centering.
44
Parameter
Sector Erase Time, 96 and 128 KByte
sector
Sector Erase Time, 8 and 16 KByte sector
Chip Erase Time
Word Programming Time
Double Word Programming Time
Chip Programming Time
(Note 3)
Input voltage with respect to V
(including A9 and OE#)
Input voltage with respect to V
V
Parameter
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
Table 13 for further information on command definitions.
Current
CC
Double Word
Description
Word Mode
. Test conditions: V
SS
SS
Mode
on all inputs except I/O inputs
on all I/O inputs
CC
(Note 1)
= 2.7 V, 1,000,000 cycles.
33.5
14.3
18.3
Typ
0.5
28
18
2
CC
= 3.0 V, one input at a time.
Am29PL320D
(Note 2)
Max
300
360
60
60
84
54
Test Conditions
Unit
µs
µs
s
s
s
s
°
C, 3.0 V V
150°C
125°C
–100 mA
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
–1.0 V
–1.0 V
Min
CC
, 1,000,000 cycles. Additionally,
Comments
Min
10
20
V
+100 mA
CC
October 2, 2003
12.5 V
Max
+ 1.0 V
Years
Years
Unit