25HF10 NAINA [Naina Semiconductor ltd.], 25HF10 Datasheet

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25HF10

Manufacturer Part Number
25HF10
Description
SILICON POWER DIODE
Manufacturer
NAINA [Naina Semiconductor ltd.]
Datasheet
FEATURES
* Available in metric and UNF thread
ELECTRICAL SPECIFICATIONS
THERMAL MECHANICAL SPECIFICATIONS
I
V
I
I
I 2 tMaximum I 2 t rating (non-rep.)
F(AV)
FSM
FRM
TYPE
VRRM
VR(RMS) Max. R.M.S. reverse voltage (V)
VR
iR(AV)
ELECTRICAL RATINGS
FM
All Diffused Series
Available in Normal & Reverse Polarity
Industrial Grade
Available In Avalanche Characteristic
Tj
Tstg
W
JC
Maximum Average Forward
Current T=140
Maximum peak forward
voltage drop @ Rated I
Maximum peak one cycle
(non-rep) surge current 10 m sec
Maximum peak repetitive
surge current®
for 5 to 10 m sec.
SILICON POWER DIODE
NUMBER 25F/FR
Max. repetitive peak reverse
voltage (v)
Max. D.C. Blocking Voltage (V)
Recommended R.M.S. working
Voltage(v)
Max. Average reverse leakage
current @ VRMM Tc 25
25 F / 25 FR
Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
Mounting torque
(Non-lubricated threads)
Approx, weight
0
C
25F/FR
F(AV)
e-mail : sales@nainasemi.com web site : www.nainasemi.com
NAINA SEMICONDUCTOR LTD.
D95,SECTOR 63 NOIDA(INDIA)
0
C uA
800A 2 Sec
400 A
1.25V
150A
25A
100
100
150
10
70
40
20
200
140
200
80
150
400
280
400
160
150
40
25 F/ FR
600
420
240
150
60
60
1.5
-65
-65
0.14 M-kg min,
0.17 M-kg max
7 gms.
0
0
0
C/W
C to 150
C to 150
800
560
800
320
150
80
Normal
Normal
POLARITY
POLARITY
A
C
A
C
1000
1000
0
100
700
400
150
Reverse
0
C
DO-5
Reverse
C
C
A
C
A
M8 x 1.25
17 A/F
Ø 8.0
17 A/F
Ø 4.0
1200
1200
120
840
480
150
NAINA
7
M 8 x 1.25
16
1400 1600
1400 1600
12
12
140
980
560
150
11.5
32
11.5
27
1120
160
640
150

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