HCR1C60 HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD], HCR1C60 Datasheet - Page 2

• Manufacturer Part Number: HCR1C60
• Description: Silicon Controlled Rectifier
• Manufacturer: HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

█ Electrical Characteristics
1. Forward current applied for 1 ms maximum duration,duty cycle ≤1%.
2. R
█ Performance Curves
Symbol
Rth(j-c)
Rth(j-a)
dv/dt
I
V
V
V
DRM
I
I
GT
G T
GD
TM
H
GK
current is not included in measurement.
Shantou Huashan Electronic Devices Co.,Ltd.
Repetitive Peak Off-State
Current
Peak On-State Voltage (1)
Gate Trigger Current（2）
Gate Trigger Voltage (2)
Non-Trigger Gate Voltage
Holding Current
Thermal Resistance
Thermal Resistance
Critical Rate of Rise Off-state
Voltage
FIGURE 1 – Gate Characteristics
Gate Current (mA)
Items
（T
a
=25
Min.
200
0.2
℃
ｕｎｌｅｓｓ ｏｔｈｅｒｗｉｓｅ ｓｐｅｃｉｆｉｅｄ）
Typ.
1.2
2.0
Max.
200
200
500
160
1.7
10
50
0.8
1.2
5.0
10
℃/W
℃/W
V/µ s
FIGURE 2 – Maximum CaseTemperture
Unit
uA
uA
V
V
V
mA
Average On-State Current (mA)
V
T
T
I
V
T
T
V
T
T
V
T
I
T
T
Junction to Case
Junction to Ambient
Waveform Rjk=1Kohm Tj=125
TM
T=100mA,
V
AK
a
a
AK
a
a
AK
a
a
AK
a
a
a
HCR1C60
=25
=125
=25
= -40
=25
= -40
=125
=25
= -40
D
=1A,PEAK
=V
=V
=6V(DC), R
=6V(DC), R
=12V, R
℃
℃
℃
℃
DRM
DRM
℃
℃
℃
℃
℃
Gate open,
Conditions
67%
L
=100 ohm
L
L
=100 ohm
=100 ohm
exponential
℃