DD200GB80 SANREX [SanRex Corporation], DD200GB80 Datasheet
DD200GB80
Manufacturer Part Number
DD200GB80
Description
DIODE MODULE
Manufacturer
SANREX [SanRex Corporation]
Datasheet
1.DD200GB80.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DD200GB80
Manufacturer:
Sanrex
Quantity:
1 000
Part Number:
DD200GB80
Manufacturer:
SANREX
Quantity:
20 000
Part Number:
DD200GB80
Quantity:
55
SanRex
Power Diode Module DD200GB series are designed for various rectifier circuits.
DD200GB has two diode two diode chips connecected in series and the mounting base is
electrically isolated from elements for simple heatsink construction. Wide voltage rating
up to 800V is available for various input voltages.
■Maximum Ratings
■Electrical Characteristics
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
●
●
●
●
Rth （ j-c） Thermal Impedance, max.
（Applications）
Symbol
Symbol
Symbol
I
Isolated mounting base
Two elements in a package for simple（single and three phase）bridge
connections
Highly reliable glass passivated chips
High surge current capability
Various rectifiers, Battery chargers, DC motor drives
F （ RMS）
V
V
I
Tstg
V
I
F （ AV）
I
V
RRM
FSM
RRM
RSM
I
Tj
ISO
DIODE MODULE
DD200GB
FM
2
t
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
I
Operating Junction Temperature
Storage Temperature
Isolation Breakdown Voltage （R.M.S.）
Mounting
Torque
Mass
Repetitive Peak Reverse Current, max.
Forward Voltage Drop, max.
2
t
®
Item
Item
Item
Mounting （M5）
Terminal （M8）
Single phase, half wave, 180℃conduction, Tc: 96℃
Single phase, half wave, 180℃conduction, Tc: 96℃
1
Value for one cycle of surge current
A.C. 1 minute
Recommended Value 1.5-2.5（15-25）
Recommended Value 8.8-10 （90-105）
Typical Value
at V
Forward current 600A, T
Junction to case （Per a half module）
／
2
cycle, 50/60H
RRM
. Single phase, half wave, T
DD200GB40
400
480
３
Z
, peak value, non-repetitive
Conditions
Conditions
j
＝25℃, Inst measurement
DD
２
Ratings
j
＝150℃
１
（Tj＝25℃ unless otherwise specified）
（Tj＝25℃ unless otherwise specified）
DD200GB80
12
800
960
18
26
−40 to ＋150
−40 to ＋125
M8×14
5000/5500
80±0.3
2
92±0.5
2.7（28）
Ratings
Ratings
125000
11（115）
26
1.40
0.18
2500
50
200
310
510
UL;E76102 （ M）
4- φ6 （M5）
R8.0
Unit：㎜
（㎏f･B）
℃/W
N･m
Unit
Unit
Unit
A
mA
℃
℃
A
A
A
V
V
V
g
V
2
S
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DD200GB80 Summary of contents
Page 1
... R8.0 M8×14 80±0.3 １ Unit：㎜ （Tj＝25℃ unless otherwise specified） DD200GB80 800 960 Ratings 200 310 5000/5500 125000 −40 to ＋150 −40 to ＋125 2500 2.7（28） （㎏f･B） 11（115） ...
Page 2
Maximum Forward Characteristics ２ １ ０ ３ ５ ２ １ ０ ２ ５ ２ １ ０ １ ０ １ ． ０ １ ． ５ ２ ． ０ Forward Voltage Drop V Average Forward Current vs. Allowable Case Temperature １ ５ ...