k9f2808q0c-dcb0 Samsung Semiconductor, Inc., k9f2808q0c-dcb0 Datasheet - Page 2

• Manufacturer Part Number: k9f2808q0c-dcb0
• Description: 16m X 8 Bit , 8m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F2808Q0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-DCB0,DIB0
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
PRODUCT LIST
FEATURES
GENERAL DESCRIPTION
Offered in 16Mx8bit or 8Mx16bit, the K9F28XXX0C is 128M bit with spare 4M bit capacity. The device is offered in 1.8V or 3.3V Vcc.
Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be per-
formed in typical 200 s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typ-
ical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The
I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all pro-
gram and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-
intensive systems can take advantage of the K9F28XXX0C’s extended reliability of 100K program/erase cycles by providing
ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F28XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
- Memory Cell Array
- Data Register
- Page Program
- Block Erase :
- Page Size
- Random Access
- Serial Page Access : 50ns(Min.)
Organization
Page Read Operation
Voltage Supply
Automatic Program and Erase
- 1.8V device(K9F28XXQ0C) : 1.7~1.95V
- 3.3V device(K9F28XXU0C) : 2.7 ~ 3.6 V
- X8 device(K9F2808X0C) : (16M + 512K)bit x 8bit
- X16 device(K9F2816X0C) : (8M + 256K)bit x 16bit
- X8 device(K9F2808X0C) : (512 + 16)bit x 8bit
- X16 device(K9F2816X0C) : (256 + 8)bit x16bit
- X8 device(K9F2808X0C) : (512 + 16)Byte
- X16 device(K9F2816X0C) : (256 + 8)Word
- X8 device(K9F2808X0C) : (16K + 512)Byte
- X16 device(K9F2816X0C) : ( 8K + 256)Word
- X8 device(K9F2808X0C) : (512 + 16)Byte
- X16 device(K9F2816X0C) : (256 + 8)Word
K9F2808Q0C-D,H
K9F2816Q0C-D,H
K9F2808U0C-D,H
K9F2816U0C-D,H
K9F2808U0C-Y,P
K9F2808U0C-V,F
K9F2816U0C-Y,P
Part Number
: 10 s(Max.)
K9F2816Q0C-DCB0,DIB0
K9F2816U0C-YCB0,YIB0
K9F2816U0C-DCB0,DIB0
Vcc Range
1.7 ~ 1.95V
2.7 ~ 3.6V
2
K9F2808U0C-VCB0,VIB0
- K9F28XXU0C-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F28XXU0C-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9F28XXX0C-DCB0/DIB0
63 - Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F28XXX0C-HCB0/HIB0
63 - Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F2808U0C-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F2808U0C-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
* K9F2808U0C-V/F(WSOPI ) is the same device as
K9F2808U0C-Y/P(TSOP1) except package type.
- Pb-free Package
- Program time : 200 s(Typ.)
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance
- Data Retention : 10 Years
Fast Write Cycle Time
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
Unique ID for Copyright Protection
Package
Organization
X16
X16
X8
X8
: 100K Program/Erase Cycles
FLASH MEMORY
PKG Type
WSOP1
TSOP1
TSOP1
TBGA
TBGA
TBGA