k9f2808u0m-yib0 Samsung Semiconductor, Inc., k9f2808u0m-yib0 Datasheet - Page 9

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k9f2808u0m-yib0

Manufacturer Part Number
k9f2808u0m-yib0
Description
Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
K9F2808U0M-YCB0, K9F2808U0M-YIB0
Invalid Block(s)
NAND Flash Technical Notes
Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. Typically,
an invalid block will contain a single bad bit. The information regarding the invalid block(s) is called as the invalid block information.
The invalid block information is written to the 1st or the 2nd page of the invalid block(s) with 00h data.
have the same quality level or as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s)
does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select tran-
sistor. The system design must be able to mask out the invalid block(s) via address mapping. The 1st block of the NAND Flash, how-
ever, is fully guaranteed to be a valid block.
Identifying Invalid Block(s)
All device locations are erased(FFh) except locations where the invalid block information is written prior to shipping.
block information is also erasable in most cases, it is impossible to recover the information once it has been erased. Therefore, the
system must be able to recognize the invalid block(s) based on the original invalid block information and create the invalid block
table via the following suggested flow chart(Figure 1). Any intentional erasure of the original invalid block information is prohibited.
Increment Block Address
Invalid Block(s) Table
Create (or update)
Figure 1. Flow chart to create invalid block table.
No
No
Set Block Address = 0
Check "FFh" ?
9
Last Block ?
Start
End
Yes
Yes
*
Check "FFh" on the 1st and 2nd page
FLASH MEMORY
Devices with invalid block(s)
Since the invalid

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