SS8053-12GT6TR SSC [Silicon Standard Corp.], SS8053-12GT6TR Datasheet - Page 2

• Manufacturer Part Number: SS8053-12GT6TR
• Description: 1.5A Ultra Low Dropout Regulator
• Manufacturer: SSC [Silicon Standard Corp.]

9/27/2006 Rev.1.01
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Input Voltage………………………………….…………7V
Power Dissipation Internally Limited
Maximum Junction Temperature.…………………150°C
Storage Temperature Range.……..-65°C <T
Reflow Temperature (soldering, 10sec)…..…....260°C
Thermal Resistance Junction to Ambient.……141°C/W
Thermal Resistance Junction to Case…………..20.1°C/W
ESD Rating (Human Body Model)……….………….2kV
V
Supply Voltage
Output Voltage
Line Regulation
Load Regulation
Quiescent Current
Ripple Rejection
Dropout Voltage
Short Circuit Current
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Con-
Note 2: The maximum power dissipation is a function of the maximum junction temperature, T
Note3: Low duty pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
Note4: The type of output capacitor should be tantalum or aluminum.
Definitions
Dropout Voltage
The input/output voltage differential at which the regu-
lator output no longer maintains regulation against fur-
ther reductions in input voltage. Measured when the
output drops 2% below its nominal value, dropout volt-
age is affected by junction temperature, load current
and minimum input supply requirements.
Line Regulation
The change in output voltage for a change in input
voltage. The measurement is made under conditions
of low dissipation or by using pulse techniques such
that the average chip temperature is not significantly
affected.
IN
=5V, I
PARAMETER
ditions are conditions under which the device functions but the specifications might not be guaranteed. For
guaranteed specifications and test conditions see the Electrical Characteristics.
resistance, Q
temperature is (T
and the chip will go into thermal shutdown.
O
= 0.5A, C
IN
JA
= 4.7µF, C
, and ambient temperature T
SYMBOL
jmax
-T
V
V
V
I
Q
IN
O
D
A
) / Q
OUT
=10µF, T
JA
fi=120Hz, 1V
V
V
10mA < I
V
I
O
www.SiliconStandard.com
IN
O
IN
. If this dissipation is exceeded, the die temperature will rise above 150°C
=1.5A
+0.7V < V
=V
=3.3V
O
J
+0.7V, I
(Note 1)
< +150°C
O
A
(Note 2)
< 1.5A
= T
IN
P-P
< 5.5V, I
J
O
, I
=10mA
= 25°C unless otherwise specified (Note 3)
CONDITION
A
O
. The maximum allowable power dissipation at any ambient
=100mA
O
=10mA
Load Regulation
The change in output voltage for a change in load
current at constant chip temperature. The measure-
ment is made under conditions of low dissipation or by
using pulse techniques such that the average chip
temperature is not significantly affected.
Maximum Power Dissipation
The maximum total device dissipation for which the
regulator will still operate within specifications.
Quiescent Bias Current
Current which is used to operate the regulator chip
and is not delivered to the load.
OPERATING CONDITIONS
Temperature Range………….………-40°C <T
Input Voltage………………………………..…2.2V ~5.5V
MIN
2.2
---
---
---
---
---
---
-2
TYP
0.2
0.8
1.7
0.5
0.8
V
55
---
O
Jmax
MAX
0.65
5.5
2.5
; total thermal
---
---
2
2
2
(Note 1)
SS8053G
UNIT
mA
dB
A
%
%
%
V
V
A
< +85°C
2 of 3