TIC106N POINN [Power Innovations Ltd], TIC106N Datasheet

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TIC106N

Manufacturer Part Number
TIC106N
Description
SILICON CONTROLLED RECTIFIERS
Manufacturer
POINN [Power Innovations Ltd]
Datasheet

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Copyright © 1997, Power Innovations Limited, UK
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance R
P R O D U C T
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
Repetitive peak off-state voltage (see Note 1)
Repetitive peak reverse voltage
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)
Surge on-state current (see Note 4)
Peak positive gate current (pulse width
Peak gate power dissipation (pulse width
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
5 A Continuous On-State Current
30 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
5. This value applies for a maximum averaging time of 20 ms.
linearly to zero at 110°C.
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
GT
of 200 µA
I N F O R M A T I O N
300 s)
300 s)
RATING
GK
= 1 k .
G
K
A
Pin 2 is in electrical contact with the mounting base.
SILICON CONTROLLED RECTIFIERS
TIC106M
TIC106M
TIC106D
TIC106S
TIC106N
TIC106D
TIC106S
TIC106N
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
APRIL 1971 - REVISED MARCH 1997
I
P
V
V
T(RMS)
I
P
T(AV)
I
T
G(AV)
I
DRM
RRM
T
T
TM
GM
GM
stg
C
L
1
2
3
-40 to +110
-40 to +125
TIC106 SERIES
VALUE
400
600
700
800
400
600
700
800
230
3.2
0.2
1.3
0.3
30
5
MDC1ACA
UNIT
°C
°C
°C
W
W
V
V
A
A
A
A
1

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TIC106N Summary of contents

Page 1

... APRIL 1971 - REVISED MARCH 1997 TO-220 PACKAGE (TOP VIEW SYMBOL VALUE TIC106D 400 TIC106M 600 V DRM TIC106S 700 TIC106N 800 TIC106D 400 TIC106M 600 V RRM TIC106S 700 TIC106N 800 I 5 T(RMS) I 3.2 T( 0.3 G(AV) T -40 to +110 C T -40 to +125 stg ...

Page 2

TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Repetitive peak rated V DRM D off-state current Repetitive peak rated V RRM ...

Page 3

PARAMETER MEASUREMENT INFORMATION 0 ...

Page 4

TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 AVERAGE ANODE ON-STATE CURRENT DERATING CURVE 6 Continuous 180º 0° 180° 1 Conduction Angle Case ...

Page 5

GATE TRIGGER CURRENT vs CASE TEMPERATURE 100 10 -50 - Case Temperature - °C C Figure 7. GATE FORWARD VOLTAGE vs GATE FORWARD CURRENT ° ...

Page 6

TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT 2 ° 300 µs p Duty Cycle 2 % 1.5 1.0 0.5 0.0 0·1 1 ...

Page 7

TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when ...

Page 8

TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, ...

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