at-31625-tr1 ETC-unknow, at-31625-tr1 Datasheet - Page 2

• Manufacturer Part Number: at-31625-tr1
• Description: Common Emitter Medium Power Output Transistor
• Manufacturer: ETC-unknow

AT-31625 Absolute Maximum Ratings
Electrical Specifications, T
Note:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A.
Symbol
Symbol
P
IMD
BV
BV
BV
h
I
CEO
V
V
V
FE
T
out
C
P
I
T
EBO
CBO
CEO
EBO
CBO
CEO
STG
C
T
j
3
Freq. = 900 MHz, V
unless otherwise specified
Output Power
Collector Efficiency
3rd Order Intermodulation Distortion, 2 Tone Test,
P
Mismatch Tolerance, No Damage
Emitter-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Forward Current Transfer Ratio
Collector Leakage Current
out
each Tone = +21 dBm
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
[1]
Parameters and Test Conditions
CE
= 4.8 V, I
[1]
[2]
C
[1]
= 25 C
CQ
= 5 mA, CW operation, Test Circuit A,
[1]
Units
mA
W
V
V
V
C
C
4-44
any phase, 2 sec duration
I
E
I
= 0.2 mA, open collector
C
V
Maximum
= 1.0 mA, open emitter
Absolute
CE
I
-65 to 150
C
= 5.0 mA, open base
= 3 V, I
16.0
320
150
1.4
9.5
1.0
P
P
P
out
F2 = 901 MHz
F1 = 899 MHz
in
in
= +28 dBm
= +19 dBm
= +19 dBm
C
[1]
= 180 mA
V
CEO
= 5 V
Notes:
1. Permanent damage may occur if
2. Derate at 15.4 mW/ C for T
3. Using the liquid crystal technique,
any of these limits are exceeded.
T
of the collector pin 4, where the
lead contacts the circuit board.
V
1-2
c
CE
is defined to be the temperature
Units Min.
Thermal Resistance
=4.8 V, I
dBm
dBc
—
m “hot-spot” resolution.
%
V
V
V
A
jc
+27.0 +28.0
c
= 65 C/W
16.0
=50 mA, T
1.4
9.5
55
80
Typ. Max.
150
-31
70
j
=150 C,
c
> 85 C.
[3]
330
:
7:1
15