at-38086-tr1 Avago Technologies, at-38086-tr1 Datasheet

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at-38086-tr1

Manufacturer Part Number
at-38086-tr1
Description
4.8 V Npn Silicon Bipolar Common Emitter Transistor -
Manufacturer
Avago Technologies
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT-38086-TR1
Manufacturer:
AVAGO/安华高
Quantity:
20 000
4.8 V NPN Silicon Bipolar
Commonּ Emitter Transistor
Technical Data
Features
• 4.8 Volt Pulsed
• +28 dBm Pulsed P
• +23.5 dBm CW P
• 60% Pulsed Collector
• 11 dB Pulsed Power Gain
• -35 dBc IMD
Applications
• Driver Amplifier for GSM
• 900 MHz ISM and Special
(pulse width = 577 sec,
duty cycle = 12.5%)/CW
Operation
@ּ 900ּ MHz, Typ.
@ּ 836.5ּ MHz, Typ.
Efficiency @ 900 MHz, Typ.
@ּ 900 MHz, Typ.
17ּ dBm per tone, 900 MHz,
Typ.
and AMPS/ETACS/ 900 MHz
NMT Cellular Phones
Mobile Radio
3
@ P
out
out
out
of
85 mil Plastic Surface
Mount Package
Outline 86
Pin Configuration
BASE
1
EMITTER
EMITTER
2
4
4-89
COLLECTOR
3
AT-38086
Description
Hewlett Packard’s AT-38086 is a
low cost, NPN silicon bipolar
junction transistor housed in a
surface mount plastic package.
This device is designed for use as
a pre-driver or driver device in
applications for cellular and
wireless communications
markets. At 4.8 volts, the
AT-38086 features +28 dBm pulsed
output power, Class AB operation,
and +23.5ּ dBm CW. Superior
efficiency and gain makes the
AT-38086 an excellent choice for
battery powered systems.
The AT-38086 is fabricated with
Hewlett Packard’s 10 GHz F
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
5965-5959E
t
Self-

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at-38086-tr1 Summary of contents

Page 1

... The AT-38086 is fabricated with Hewlett Packard’s 10 GHz F Self- t Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self- alignment techniques, and gold metalization in the fabrication of these devices ...

Page 2

... Collector Leakage Current CEO Notes: 1. With external matching on input and output, tested ohm environment. Refer to Test Circuit A (GSM). 2. With external matching on input and output, tested ohm environment. Refer to Test Circuit B (AMPS). 3. Test circuit B re-tuned at 900ּ MHz. Absolute [1] Units ...

Page 3

... + – INPUT POWER (dBm) Figure 4. Output Power vs. Input Power Over Temperature mA, pulsed operation, pulse widthּ =ּ 577ּ 0.75 -177 source 30 = 0.48 +161 load ...

Page 4

... + – INPUT POWER (dBm) Figure 10. Output Power vs. Input Power Over Temperature mA, CW operation, Test Circuit B (AMPS), unless otherwise specified 29 = 0.86 -180 source = 0.46 +128 27 load 3 4 ...

Page 5

... AT-38086 Typical Large Signal Impedances (AMPS) Freq. = 836.5 MHz 4 mA, CW Operation Freq. source MHz Mag. Ang. 824 0.856 -178.9 836.5 0.864 -179.9 849 0.870 -179.1 ...

Page 6

... AT-38086 Typical Scattering Parameters, Common Emitter 3 mA Freq GHz Mag. Ang. 0.05 0.71 -85 0.10 0.73 -124 0.25 0.75 -160 0.50 0.76 -176 15.5 0.75 0.76 175 12.0 0.90 0.77 171 10.4 1.00 0.77 169 1.25 0.78 164 1.50 0.78 160 1.75 0.79 156 2.00 0.80 152 2.25 0.80 148 2.50 0.81 145 2.75 0.81 142 3.00 0.82 139 0.05 0.72 -82 0.10 0.73 -121 0.25 0.75 -158 0.50 0.75 -176 0.75 0.76 176 ...

Page 7

... FREQUENCY (GHz) Figure 14. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency 3.6V mA. Part Number Ordering Information Part Number No. of Devices AT-38086-TR1 AT-38086-BLK Package Dimensions Outline 86 0.51 0.13 (0.020 0.005 (0.092 2 2.67 0.38 (0.105 0.15) 1.52 0.25 (0.060 0.010) 5 TYP. 8 MAX 0 MIN 0 ...

Page 8

... Test Circuit 4.8 V FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 CQ Freq. = 900 MHz Thickness = 0.79 (.031) NOTE: Dimensions are shown in millimeters (inches). Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz for Pulsed Operation (GSM 619 DC B 100 nF Transistor 100 ...

Page 9

... Test Circuit 4.8 V FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 CQ Freq. = 836.5 MHz Thickness = 0.79 (.031) NOTE: Dimensions are shown in millimeters (inches). Test Circuit B: Test Circuit Schematic Diagram @ 836.5 MHz for CW Operation (AMPS 619 DC B 100 nF Transistor 100 836 ...

Page 10

... Tape Dimensions and Product Orientation for Outline 86 REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE COVER TAPE DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH ...

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