BTB15 SIRECTIFIER [Sirectifier Semiconductors], BTB15 Datasheet - Page 4

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BTB15

Manufacturer Part Number
BTB15
Description
Discrete Triacs(Non-Isolated/Isolated)
Manufacturer
SIRECTIFIER [Sirectifier Semiconductors]
Datasheet

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2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
F ig. 6:
current for a
tp < 10ms, a nd corres ponding value of I²t.
F ig. 8:
decreas e of main current vers us (dV /dt)c (typica l
values ).
100
0.1
0.01
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
IT S M (A ), I² t (A ² s )
B
C
dI/dt limitation:
50A /µ s
Non-repetitive s urge peak on-s tate
R elative variation of critical rate of
S W
1.0
0.10
s inus oida l puls e
(dV /dt)c (V /µ s )
Discrete Triacs(Non-Isolated/Isolated)
tp (ms )
10.0
1.00
BTB/BTA15
with width
IT S M
B W/C W/T 1635
T j initial=25°C
I²t
100.0
10.00
2.5
2.0
1.5
1.0
0.5
0.0
F ig. 7: R elative va riation of gate trigger current,
holding current and la tching current versus
junction temperature (typical va lues ).
F ig. 9: R elative variation of critical rate of
decreas e
temperature.
6
5
4
3
2
1
0
0
-40
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
IG T,IH,IL [T j] / IG T,IH,IL [T j=25° C ]
IH & IL
-20
IG T
25
of main current vers us
0
20
50
40
T j (° C )
T j(° C )
60
75
80
100
100
120
junction
125
140

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