BTB772I3 CYSTEKEC [Cystech Electonics Corp.], BTB772I3 Datasheet

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... Symbol BTB772I3 B：Base C：Collector E：Emitter Absolute Maximum Ratings Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw 350μs,Du ≦ BTB772I3 CYStech Electronics Corp -2A / -0. Outline (Ta=25°C) Symbol V CBO V CEO V EBO I ...

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... BV -5 EBO I - CBO I - EBO *V - CE(sat BE(sat 120 180 Cob - Classification Rank P Range 180~390 Ordering Information Device BTB772I3 (RoHS compliant) BTB772I3 CYStech Electronics Corp. Typ. Max. Unit - - μ μA -0.3 -0 500 - 80 - MHz 250~500 ...

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... Collector current---IC(mA) B-E saturation voltage vs Collector current 10000 IC=10IB 1000 100 1 10 100 Collector current---IC(mA) Recommended Storage Condition: Temperature : 10~ 35 °C Humidity : 30~ 60% RH BTB772I3 CYStech Electronics Corp. C-E saturation voltage vs Collector current 10000 VCE=5V 1000 100 VCE= 1000 10000 ...

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... P Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Note : All temperatures refer to topside of the package, measured on the package body surface. BTB772I3 CYStech Electronics Corp. Peak Temperature 260 +0/-5 °C Sn-Pb eutectic Assembly 3°C/second max. 100°C 150° ...

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... CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB772I3 CYStech Electronics Corp. C ...