SI8220 SILABS [Silicon Laboratories], SI8220 Datasheet - Page 7

• Manufacturer Part Number: SI8220
• Description: 0.5 AND 2.5 AMP ISODRIVERS WITH OPTO INPUT (2.5, 3.75, AND 5.0 KVRMS)
• Manufacturer: SILABS [Silicon Laboratories]

3. Regulatory Information
Table 2. Regulatory Information*
Table 3. Insulation and Safety-Related Specifications
CSA
The Si82xx is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873.
VDE
The Si82xx is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001.
UL
The Si82xx is certified under UL1577 component recognition program. For more details, see File E257455.
*Note: Regulatory Certifications apply to 2.5 kV
Parameter
Nominal Air Gap (Clearance)
Nominal External Tracking (Creepage)
Minimum Internal Gap (Internal Clearance)
Tracking Resistance
(Comparative Tracking Index)
Resistance (Input-Output)
Capacitance (Input-Output)
Input Capacitance
Notes:
1. The values in this table correspond to the nominal creepage and clearance values as detailed in "12.Package Outline:
2. To determine resistance and capacitance, the Si82xx is converted into a 2-terminal device. Pins 1–8 (1–4, NB SOIC-8)
3. Measured from input pin to ground.
Regulatory Certifications apply to 3.75 kV
Regulatory Certifications apply to 5.0 kV
For more information, see "9.Ordering Guide" on page 21.
16-Pin Wide Body SOIC" on page 25, "10.Package Outline: 8-Pin Narrow Body SOIC" on page 23. VDE certifies the
clearance and creepage limits as 8.5 mm minimum for the WB SOIC-16 package and 4.7 mm minimum for the NB
SOIC-8 package. UL does not impose a clearance and creepage minimum for component level certifications. CSA
certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC-8 and 7.6 mm minimum for the WB
SOIC-16 package.
are shorted together to form the first terminal and pins 9–16 (5–8, NB SOIC-8) are shorted together to form the second
terminal. The parameters are then measured between these two terminals.
3
2
2
1
1
RMS
RMS
RMS
rated devices which are production tested to 6.0 kV
rated devices which are production tested to 3.0 kV
rated devices which are production tested to 4.5 kV
Symbol
L(IO1)
L(IO2)
Rev. 0.22
CTI
R
C
C
IO
IO
I
60112/VDE 0303
Test Condition
f = 1 MHz
DIN IEC
Part 1
SOIC-16
8.0 min
8.0 min
0.014
>175
10
WB
2.0
4.0
12
Value
Si8220/21
RMS
RMS
RMS
4.01 min
SOIC-8
4.9 min
0.014
>175
10
for 1 sec.
NB
4.0
1.0
for 1 sec.
for 1 sec.
12
Unit
mm
mm
mm
pF
pF

V
7