lc5876 Sanyo Semiconductor Corporation, lc5876 Datasheet - Page 13

• Manufacturer Part Number: lc5876
• Description: On-chip Eprom Microcomputer 4-bit Single Chip Microprocessor With Lcd Driver, 12 Kbytes Of Eprom And 1 Kbit Of Ram On-chip
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Electrical Characteristics at V
Note: * The 24 pins S1 to S4, K1 to K4, P1 to P4, M1 to M4, SO1 to SO4 and A1 to A4.
Oscillator start time
Oscillator stabilization degree
Oscillator start time
Oscillator start time
Oscillator start time
Oscillator compensation
capacitance
Input resistance
Output low-level voltage
Output high-level voltage
Output low-level voltage
Output off leakage current
Segment port output impedance
• When CMOS output ports are used
Output high-level voltage
Output low-level voltage
• When p-channel open drain output ports are used (See Figure 11.)
Output high-level voltage
Output off leakage current
• When n-channel open-drain output ports are used (See Figure 11.)
Output low-level voltage
Output off leakage current
• Static drive
Output high-level voltage
Output low-level voltage
Output high-level voltage
Output low-level voltage
Parameter
Parameter
| TSTT |
| TSTT |
| TSTT |
| TSTT |
Symbol
Symbol
V
V
V
V
V
V
V
V
V
V
V
R
R
R
R
R
R
R
R
| I
| I
| I
R
OL
OH
OL
OH
OL
OH
OL
OH
OL
OH
OL
IN
IN
IN
IN
IN
IN
IN
IN
Cd
∆f
OFF
OFF
OFF
IN
1 A
1 B
1 C
1 D
2 A
2 B
2 C
2 D
(1)
(2)
(3)
(4)
(4)
(6)
(2)
(3)
(4)
(4)
(6)
3
|
|
|
DD
V
V
to 3.05 V
V
V
V
V
VIN = 0.2 V
Low-level hold transistor *, Figure 2
VIN = V
VIN = 0.8 V
High-level hold transistor *, Figure 2
VIN = V
VIN = 0.2 V
VIN = V
VIN = 0.8 V
VIN = V
VIN = V
With a pull-down resistor on the TST pin
IOL = 10.0 mA
IOH = –1.0 mA
IOL = 2.0 mA
VOH = 10.5 V
IOH = –500 µA
IOL = 500 µA
IOH = –500 µA
VOL = V
IOL = 500 µA
VOH = V
IOH = –40 µA
IOL = 40 µA
IOH = –400 µA
IOL = 400 µA
DD
DD
DD
DD
DD
DD
= 4.5 to 5.5 V, V
= 2.8 V
= 2.95
= 2.8 V
= 2.8 V
= 2.8 V
= 3.0 V
DD
SS
DD
SS
DD
SS
DD
, Pull-up resistor *, Figure 2
, INT pull-up resistor
, Pull-down resistor *, Figure 2
, INT pull-down resistor
,
DD
DD
DD
DD
,
,
, INT low-level hold transistor
, INT high-level hold transistor
Crystal oscillator specifications,
with a 32 kHz crystal
CI ≤ 25 kΩ, Cg = 20 pF
Figure 6
Crystal oscillator specifications,
with a 38 or 65 kHz crystal
XCg = 10 pF, CI ≤ 25 kΩ
Figure 6
CF oscillator specifications,
with a 400 kHz CF used
Ccg = Ccd = 330 pF, Figure 7
CF oscillator specifications,
with an 800 kHz CF used
Ccg = Ccd = 220 pF or 100 pF
Figure 7
XTOUT pin (built-in)
Conditions/Pin
Conditions/Pin
LC58E76
N1 – 4
K1 – 4, P1 – 4, M1 – 4,
SO1 – 4, A1 – 4
(K, P, M, SO and A ports
in output mode)
N1 – 4, Figure 10
Seg 1 to 35
Seg 1 to 35
Seg 1 to 35
Seg 1 to 35
COM1
SS
= 0 V, Ta = 25°C
V
V
V
V
V
DD
DD
DD
DD
DD
min
min
– 0.5
– 0.5
– 0.5
– 0.2
– 0.2
100
100
30
10
30
10
30
30
20
V
V
V
Ratings
Ratings
DD
DD
DD
20
typ
typ
– 0.2
– 0.2
– 0.2
120
120
120
500
120
500
0.2
0.2
50
50
70
Continued on next page.
2000
2000
max
max
30
30
500
200
500
200
500
500
300
0.5
0.5
1.0
0.5
1.0
0.5
1.0
0.2
0.2
5
3
5
No. 4434-13/17
ppm
Unit
Unit
ms
ms
pF
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
s
s