SI2300 KEXIN [Guangdong Kexin Industrial Co.,Ltd], SI2300 Datasheet - Page 2

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SI2300

Manufacturer Part Number
SI2300
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Datasheet

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2
SMD Type
SMD Type
www.kexin.com.cn
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage *
Drain- Source on-state Resistance *
On-State Drain Current *
Forward Transconductance *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Drain-Source Diode Forward Current *
Diode Forward Voltage
* Pulse Test:Pulse Width 300 ,Duty Cycle 2%
Electrical Characteristics Ta = 25
Parameter
KI2300(
Symbol
R
V
I
C
C
V
t
t
DS(ON)
C
I
I
D(ON)
D(on)
D(off)
Q
V
GS(th)
Q
GSS
DSS
g
Q
DSS
OSS
RSS
I
ISS
t
t
SD
S
FS
gs
gd
r
f
g
V
V
V
V
V
V
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
GS
GS
DS
DS
DS
DD
DS
GS
,R
=20V,V
=5V,V
=5V,I
=0V,I
= 10V,V
=V
=4.5V,I
=2.5V,I
=1.8V,I
=10V,I
=0V,I
= 15V, V
GEN
= 10V, I
SI2300)
DS
=6
,I
D
D
S
GS
D
=5A
=1.25A
=250uA
D
GS
D
D
D
=250uA
=1A,V
=5.0A
=4.0A
=1.0A
D
=4.5V
Testconditons
GS
=0V
DS
= 3.5A,V
=0V
= 0V,f =1.0MHZ
GS
=4.5V,R
GS
= 4.5V
L
=10
Min
0.6
20
18
5
MOSFET
0.825
0.78
31.8
14.5
50.3
31.9
16.8
Typ
888
144
115
2.5
5.4
32
50
62
Max
1.25
1.5
1.2
40
60
75
100
1
IC
Unit
m
m
m
nC
nC
nC
uA
nA
ns
ns
ns
ns
pF
pF
pF
V
V
A
S
A
V

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