IRF2805S IRF [International Rectifier], IRF2805S Datasheet
IRF2805S
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IRF2805S Summary of contents
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... Typ. (PCB Mounted, steady state)** PD - 94428 IRF2805S IRF2805L ® HEXFET Power MOSFET 55V DSS R = 4.7m DS(on 135AV TO-262 D Pak IRF2805L IRF2805S Max. Units 135V 96V A 700 200 W 1.3 W/°C ± 380 mJ 1220 A mJ 2.0 V/ns - 175 °C Max. Units ––– ...
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... IRF2805S/IRF2805L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 25°C 100 25V 20µs PULSE WIDTH 10 4.0 5.0 6.0 7 Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com IRF2805S/IRF2805L 1000 TOP BOTTOM 4.5V 4.5V 100 10 10 100 0.1 Fig 2. Typical Output Characteristics 3 2 175°C 2 ...
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... IRF2805S/IRF2805L 10000 0V, C iss = SHORTED 8000 C rss = oss = 6000 Ciss 4000 2000 Coss Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 175°C 100.0 10 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1 Source-toDrain Voltage (V) Fig 7 ...
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... Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRF2805S/IRF2805L Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) ...
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... IRF2805S/IRF2805L Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D ...
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... Starting Junction Temperature (°C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com IRF2805S/IRF2805L 1.0E-05 1.0E-04 tav (sec) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T every part type ...
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... IRF2805S/IRF2805L * D.U Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D.U. Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent *** V = 5.0V for Logic Level and 3V Drive Devices GS Fig 17. For N-channel 8 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane ...
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... D Pak Package Outline 2 D Pak Part Marking Information www.irf.com IRF2805S/IRF2805L 9 ...
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... IRF2805S/IRF2805L TO-262 Package Outline TO-262 Part Marking Information 10 www.irf.com ...
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... DIS WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRF2805S/IRF2805L (. (. (. ...