TP0620N3 SUTEX [Supertex, Inc], TP0620N3 Datasheet - Page 2

• Manufacturer Part Number: TP0620N3
• Description: P-Channel Enhancement-Mode Vertical DMOS FETs
• Manufacturer: SUTEX [Supertex, Inc]

Thermal Characteristics
*
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
TO-92
I
D
OUTPUT
(continuous) is limited by max rated T
Symbol
BV
V
∆V
I
I
I
R
∆R
G
C
C
C
t
t
t
t
V
t
GSS
DSS
D(ON)
d(ON)
r
d(OFF)
f
rr
Package
GS(th)
DS(ON)
ISS
OSS
RSS
SD
INPUT
FS
DSS
GS(th)
DS(ON)
-10V
V
0V
0V
DD
Drain-to-Source Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
Gate Threshold Voltage
Change in V
Gate Body Leakage
Zero Gate Voltage Drain Current
ON-State Drain Current
Change in R
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
I
D
(continuous)*
10%
-175mA
t
d(ON)
t
(ON)
GS(th)
DS(ON)
j
.
Parameter
t
10%
r
with Temperature
with Temperature
90%
90%
I
D
t
(pulsed)
d(OFF)
-0.8A
t
90%
(OFF)
(@ 25°C unless otherwise specified)
10%
t
F
Power Dissipation
-0.25
-0.75
-200
Min
-1.0
100
@ T
2
C
1W
= 25
Typ
150
300
9.0
7.0
85
30
10
°
C
GENERATOR
Max
-100
-2.4
-4.5
-1.0
-1.8
150
-10
1.7
15
12
85
35
10
15
20
16
PULSE
°
125
C/W
θ
INPUT
R
jc
gen
mV/°C
%/°C
Unit
m
mA
V
nA
µA
A
Ω
pF
ns
ns
V
V
°
170
C/W
θ
V
ja
V
V
I
R
V
V
V
V
V
T
V
V
V
V
V
V
f = 1 MHz
V
V
D
GS
GS
DD
A
GEN
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
GS
= -0.75A
= 125°C
= 0V, I
= 0V, V
= -25V
= -25V, I
= V
= V
= ±20V, V
= 0V, V
= 0V, V
= -5V, V
= -10V, V
= -5V, I
= -10V, I
= -10V, I
= 0V, I
= 0V, I
= 25Ω
DS
DS
Conditions
-175mA
, I
, I
D
SD
SD
I
DS
DR
D
D
D
DS
DS
= -2.0mA
DS
D
D
D
= -0.1A
= -1.0mA
= -1.0mA
DS
= -0.5A
= -0.5A
*
V
= -25V
DS
= Max Rating
= 0.8 Max Rating
= -0.4A
= -0.2A
= -0.2A
DD
= -25V
= -25V
= 0V
R
L
D.U.T.
OUTPUT
-0.8A
I
DRM
TP0620