ST7407 STANSON [Stanson Technology], ST7407 Datasheet
ST7407
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ST7407 Summary of contents
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... DESCRIPTION The ST7407 is the P-Channel logic enhancement mode power field effect transistors It is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, ...
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... ST7407 P Channel Enhancement Mode MOSFET Symbol Typical V -20 DSS ± GSS T =25℃ -2 -1.7 T =70 ℃ -1 =25℃ 0. 0.22 T =70 ℃ 150 J T -55/150 STG R 120 θ -3.4A Unit ℃ ℃ ℃ /W ST7407 2006. V1 ...
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... V =- d(on Ω =-1. =-4.5V t GEN d(off Ω ST7407 -3.4A Min Typ Max Unit -20 V -0.8 V -0.35 ± 100 -5 0.090 0.100 0.115 0.125 Ω 0.150 0.170 6.0 S -0.8 -1.2 V 4.8 8.0 1.0 nC 1.0 485 ST7407 2006. V1 ...
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... TYPICAL CHARACTERICTICS (25 ℃ Unless noted) 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST7407 P Channel Enhancement Mode MOSFET 4 -3.4A ST7407 2006. V1 ...
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... TYPICAL CHARACTERICTICS (25 ℃ Unless noted) 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST7407 P Channel Enhancement Mode MOSFET 5 -3.4A ST7407 2006. V1 ...
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... Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST7407 P Channel Enhancement Mode MOSFET 6 -3.4A ST7407 2006. V1 ...
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... SOT-323 (SC-70) PACKAGE OUTLINE 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST7407 P Channel Enhancement Mode MOSFET 7 -3.4A ST7407 2006. V1 ...