2sc1214dtz-e Renesas Electronics Corporation., 2sc1214dtz-e Datasheet - Page 2

• Manufacturer Part Number: 2sc1214dtz-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC1214
Electrical Characteristics
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Note:
60 to 120
Rev.2.00 Aug 10, 2005 page 2 of 4
B
1. The 2SC1214 is grouped by h
100 to 200
Item
C
160 to 320
D
FE
Symbol
V
V
V
V
as follows.
h
(BR)CBO
(BR)CEO
(BR)EBO
I
CE(sat)
V
h
CBO
FE
FE
BE
*
1
Min
50
50
60
10
—
—
—
4
0.64
Typ
0.2
—
—
—
—
—
—
Max
320
0.5
0.6
—
—
—
—
—
Unit
V
V
V
V
V
A
I
I
I
V
V
V
(pulse test)
I
(Pulse test)
V
C
C
E
C
CB
CE
CE
CE
= 10 A, I
= 1 mA, R
= 10 A, I
= 150 mA, I
= 20 V, I
= 3 V, I
= 3 V, I
= 3 V, I
Test conditions
C
C
C
E
C
BE
E
= 10 mA
= 500 mA
= 10 mA
= 0
= 0
B
= 0
=
= 15 mA
(Ta = 25°C)