IRLI520 IRF [International Rectifier], IRLI520 Datasheet

IRLI520

Manufacturer Part Number

IRLI520

Description

Power MOSFET

Manufacturer

IRF [International Rectifier]

Datasheet

1.IRLI520.pdf (2 pages)

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Absolute Maximum Ratings

Thermal Resistance

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

and external heatsink. This isolation is equivalent to using

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

dv/dt

STG

@ T

Logic-Level Gate Drive

Advanced Process Technology

Isolated Package

High Voltage Isolation = 2.5KVRMS

Sink to Lead Creepage Dist. = 4.8mm

Fully Avalanche Rated

= 25°C

= 100°C

= 25°C

on-resistance per silicon area.

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Junction-to-Case

Junction-to-Ambient

Parameter

PRELIMINARY

@ 10V

This

Typ.

300 (1.6mm from case )

–––

HEXFET

10 lbf•in (1.1N•m)

-55 to + 175

TO-220 FULLPAK

Max.

0.20

± 16

8.1

5.7

6.0

3.0

5.0

IRLI520N

Power MOSFET

DS(on)

Max.

5.0

DSS

PD - 9.1496A

=8.1A

= 100V

= 0.18

Units

W/°C

°C/W

V/ns

°C

3/16/98

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IRLI520 Summary of contents

Page 1

... Junction-to-Ambient JA PRELIMINARY HEXFET This TO-220 FULLPAK Max. @ 10V GS @ 10V GS 0.20 - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– ––– 9.1496A IRLI520N ® Power MOSFET V = 100V DSS R = 0.18 DS(on) I =8.1A D Units 8.1 5 W/°C ± ...

Page 2

... IRLI520N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

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