FS14KM-12A MITSUBISHI [Mitsubishi Electric Semiconductor], FS14KM-12A Datasheet - Page 4

• Manufacturer Part Number: FS14KM-12A
• Description: HIGH-SPEED SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

10
10
10
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
–1
8
4
0
1
7
5
3
2
0
7
5
3
2
0
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
V
I
Pulse Test
V
I
D
D
GS
–50
GS
–50
= 7A
= 1mA
ON-STATE RESISTANCE VS.
BREAKDOWN VOLTAGE VS.
= 10V
= 0V
CHANNEL TEMPERATURE
CHANNEL TEMPERATURE
GATE-SOURCE VOLTAGE
40
GATE CHARGE Q
VS. GATE CHARGE
0
0
(TYPICAL)
(TYPICAL)
(TYPICAL)
80
50
50
120
100
100
g
(nC)
T
I
D
C
160
h = 25°C
= 14A
V
100V
200V
400V
150
150
DS
=
200
10
10
10
10
–1
–2
1
7
5
3
2
0
7
5
3
2
7
5
3
2
10
–4
= 0.02
Single Pulse
D = 1.0
= 0.5
= 0.2
= 0.1
= 0.05
2 3 5 7
5.0
4.0
3.0
2.0
1.0
40
32
24
16
8
0
0
10
0
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
SOURCE-DRAIN VOLTAGE V
V
I
–3
D
DS
–50
2 3 5 7
FORWARD CHARACTERISTICS
= 1mA
= 10V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
0.8
SOURCE-DRAIN DIODE
MITSUBISHI Nch POWER MOSFET
= 0.01
PULSE WIDTH t
10
CHARACTERISTICS
–2
0
2 3 5 7
HIGH-SPEED SWITCHING USE
(TYPICAL)
1.6
(TYPICAL)
50
10
–1
2.4
2 3 5 7
100
FS14KM-12A
w
T
125°C
C
(s)
75°C
10
V
Pulse Test
P
= 25°C
3.2
D
tw
0
GS
DM
=
2 3 5 7
T
SD
tw
= 0V
T
150
(V)
4.0
10
1
2 3 5 7
Sep. 2001
10
2