SI3442 FAIRCHILD [Fairchild Semiconductor], SI3442 Datasheet
SI3442
Manufacturer Part Number
SI3442
Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.SI3442.pdf
(7 pages)
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Absolute Maximum Ratings
____________________________________________________________________________________________
Symbol Parameter
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 2001Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
,T
JA
JC
SI3442DV
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is tailored to minimize on-state resistance. These
devices are particularly suited for low voltage applications in
notebook computers, portable phones, PCMICA cards, and
other battery powered circuits where fast switching, and low
in-line power loss are needed in a very small outline surface
mount package.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
STG
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
T
A
= 25°C unless otherwise note
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
4.1 A, 20 V. R
Proprietary SuperSOT
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
Exceptional on-resistance and maximum DC current
capability.
R
DS(ON)
DS(ON)
SI3442DV
4
5
6
-55 to 150
4.1
1.6
0.8
20
15
78
30
= 0.075
8
1
= 0.06
TM
-6 package design using copper
@ V
@ V
GS
GS
= 4.5 V
=2.7 V.
March 2001
3
2
1
DS(ON)
.
SI3442DV Rev. A
°C/W
°C/W
W
°C
V
V
A
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