2SJ181S HITACHI [Hitachi Semiconductor], 2SJ181S Datasheet - Page 3

• Manufacturer Part Number: 2SJ181S
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

–1.0
–0.8
–0.6
–0.4
–0.2
40
30
20
10
0
0
Drain to Source Voltage
Power vs. Temperature Derating
–10 V
Typical Output Characteristics
Case Temperature
–10
50
–20
–6 V
100
V
GS
–30
–4.5 V
= –4 V
–5 V
Tc (°C)
Pulse Test
150
V
–40
DS
(V)
200
–50
–0.03
–0.01
–0.5
–0.4
–0.3
–0.2
–0.1
–0.3
–0.1
–10
–3
–1
–10
0
Operation in
this area is
limited by R
Ta = 25 °C
Drain to Source Voltage
Gate to Source Voltage
Typical Transfer Characteristics
Maximum Safe Operation Area
–20
–2
75 °C
–50
2SJ181(L), 2SJ181(S)
DS(on)
–4
–100 –200
–6
Tc = –25 °C
25 °C
V
Pulse Test
DS
V
V
10 µs
= –20 V
GS
DS
–8
–500 –1000
(V)
(V)
–10
3