V3025 EMMICRO [EM Microelectronic - MARIN SA], V3025 Datasheet - Page 2

• Manufacturer Part Number: V3025
• Description: 17Very Low Power 8-Bit 32 kHz RTC Module with Digital Trimming, User RAM and Battery Switch-over
• Manufacturer: EMMICRO [EM Microelectronic - MARIN SA]

Absolute Maximum Ratings
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability
or cause malfunction.
Electrical Characteristics
V
Note 1: With PFO = 0 (V
Note 2: All other inputs to V
Note 3: At a given temperature.
Note 4: See Fig. 5
Copyright © 2004, EM Microelectronic-Marin SA
Parameter
Standby current (note 1)
Standby current (note 1)
Dynamic current (note 2)
Output low voltage
Output low voltage
Inputs and Outputs
Input logic low
Input logic high
Output logic low
Output logic high
Pullup on SYNC
Input leakage
Output tri-state leakage
Oscillator Characteristics
Starting voltage
Frequency Characteristics
Start-up time
Frequency tolerance
Frequency stability
Temperature stability
Aging
Accuracy versus switch-
over
PFI activation voltage
PFI hysteresis
Parameter
Maximum voltage at V
V
Max. voltage at remaining pins V
Min. voltage on all pins
Maximum storage temperature T
Minimum storage temperature T
Maximum electrostatic
discharge to MIL-STD-883C
method 3015.7 with ref. to V
Maximum soldering conditions T
Shock resistance
IRQ (open drain)
DD
BAT
= 5.0V ±10%, V
With PFO = 1 (V
R
BAT
= 3V, T
DD
SS
SUP
and
) all I/O pads can be tri-state, tested.
DD
), CS = 1 (V
SS
A
and all outputs open.
= -40 to +85°C, unless otherwise specified
Symbol
V
Symbol
V
STOmax
SUPmax
V
STOmin
V
V
Smax
Smax
V
T
I
V
A
I
I
I
V
V
V
SUP
∆f/f
V
min
V
V
I
f
t
DD1
DD2
BAT
DYN
I
t
I
STA
STA
STA
PFL
LS
TS
sta
sta
IN
ag
SW
OL
OL
OL
OH
IH
IL
H
DD
0.3ms, ½ sine
250°C x 10s
V
V
) and all other I/O pads fixed to V
Conditions
V
Test Conditions
V
V
V
I
I
T
T
I
I
T
V
V
T
T
hex
2.0 ≤ V
addr. 10 hex = 00 hex
T
V
switching between 2 to 5V in
70ms
CS = 4 MHz, RD = V
CS = 1
DD
WR = V
SS
SS
+125°C
OL
OL
OL
OH
5000 g.
1000V
A
A
A
A
A
A
DD
DD
DD
ILS
SS
BAT
-55°C
= +25°C
= +25°C
= +25°C
≥ +25°C
= +25°C addr. 10 hex = 00
= +25°C, first year
= 6 mA
+ 7.0V
– 0.3V
= 1 mA, V
= 6 mA
+ 0.3V
= 6 mA
< V
= 3 V, V
= 5.5 V, PFI = 0
= 0 V, PFI = 0
= 0.8 V
= 3V, 10 pulses of V
Table 1
DD
IN
DD
< V
≤ 5.5 V (note 3)
BAT
DD
DD
= 0V, PFI = 0
= 2 V
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, anti-static precautions
must be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur when
all terminal voltages are kept within the voltage range.
Unused inputs must always be tied to a defined logic
voltage level.
Operating Conditions
2
Parameter
Operating temperature
Main supply voltage
Battery supply voltage
Logic supply voltage
Supply voltage dv/dt
(power-up & down)
Decoupling capacitor
SS
DD
SUP
or V
0.8 V
Min
150
2.4
20
2
SS
SUP
: same standby current, not tested.
Symbol
(note 4)
see Fig.6
0.5 V
dv/dt
V
V
V
T
Typ
100
210
SUP
1.2
2.5
1.3
2.5
0.2
BAT
40
DD
A
5
5
1
1
DD
www.emmicroelectronic.com
Min
-40
2.0
0.2 V
2
2
1000
1000
Max
251
1.5
0.4
0.4
0.4
10
15
10
±5
5
SUP
V3025
Typ
100
5.0
ppm/year
Max
+85
5.5
5.5
ppm/V
4
6
Unit
ppm
ppm
ppm
mA
mV
µA
µA
µA
µA
nA
nA
V
V
V
V
V
V
V
V
V
Table 2
Table 3
s
Unit
V/µs
°C
nF
V
V
V